Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
3 AMP
800 - 1200 V
35 nsec
Hyper Fast Rectifier
Features:
•
•
•
•
•
•
•
•
Hyper Fast Recovery: 35 nsec maximum
PIV to 1200 Volts
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Single Chip Construction
Low Reverse Leakage
TX, TXV, S Level screening Available
2/
DESIGNER’S DATA SHEET
Part Number/Ordering Information
1/
SDR3
___
HF
___ ___
Screening
2/
│
│
└
__ = Not Screened
│
│
TX = TX Level
│
│
TXV = TXV
│
│
S = S Level
│
│
Package Type
___ = Axial
│
└
SMS = Surface Mount Square Tab
│
└
Family/Voltage
K = 800 V
M = 1000 V
N = 1200 V
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
V
RRM
V
RSM
V
R
Io
I
FSM
T
OP
& T
STG
800
1000
1200
3.0
70
-65 to +175
16
12
Volts
Amps
Amps
ºC
ºC/W
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, T
L
= 25
°C
)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
L
= 25
°C
)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 1/4"
Junction to Tabs
R
θJE
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Axial Lead Diode
SMS
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR3DHF & SDR3DHFSMS
thru
SDR3NHF & SDR3NHFSMS
Symbol
Max
Units
Electrical Characteristic
Instantaneous Forward Voltage Drop
(T
A
= 25ºC, pulsed)
Instantaneous Forward Voltage Drop
(T
A
= -55ºC, pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, pulsed)
Reverse Recovery Time
(I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
=
25ºC)
Junction Capacitance
(V
R
= 10V
DC
, f = 1MHz, T
A
= 25ºC)
Case Outline:
(Axial)
I
F
I
F
I
F
I
F
= 1A
= 3A
= 1A
= 3A
V
F1
V
F2
V
F3
V
F4
1.9
3.1
2.0
3.2
10
300
35
30
DIM
A
B
C
D
MIN
––
––
0.047”
0.950”
V
DC
V
DC
µA
µA
nsec
pF
MAX
0.165”
0.220”
0.053”
––
I
R1
I
R2
t
RR
C
J
Case Outline:
(SMS)
DIM
A
B
C
D
MIN
0.172”
0.180”
0.022”
0.002”
MAX
0.180”
0.280”
0.028”
--
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0097B
DOC
Microcontroller MCU
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