Power Field-Effect Transistor, 1A I(D), 30V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | SANYO |
| package instruction | FLATPACK, R-PDFP-F6 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 1 A |
| Maximum drain-source on-resistance | 1.1 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDFP-F6 |
| Number of components | 1 |
| Number of terminals | 6 |
| Operating mode | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |