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40CTQ045-1

Description
20 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA
CategoryDiscrete semiconductor    diode   
File Size231KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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40CTQ045-1 Overview

20 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA

40CTQ045-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-262AA
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE; HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.68 V
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Maximum non-repetitive peak forward current1240 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-20544 rev. C 12/01
40CTQ045
40CTQ045S
40CTQ045-1
SCHOTTKY RECTIFIER
40 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 20 Apk, T
J
= 125°C
(per leg)
range
Description/Features
Units
A
V
A
V
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up to
150° C junction temperature. Typical applications are in
switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
150° C T
J
operation
Center tap configuration
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
40
45
1240
0.48
- 55 to 150
°C
Case Styles
40CTQ...
40CTQ... S
40CTQ... -1
Base
Common
Cathode
2
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
TO-220
www.irf.com
D
2
PAK
TO-262
1

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Description 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE, TO-220AB 20 A, SILICON, RECTIFIER DIODE, TO-220AB

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