EDI4164MEV70SI datasheet, PDF - EEWORLD Datasheet

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EDI4164MEV70SI: DescriptionEDO DRAM, 4MX16, 70ns, CMOS, PDSO50,; Categorystorage storage; File Size320KB，12 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI4164MEV70SI Overview

EDO DRAM, 4MX16, 70ns, CMOS, PDSO50,

EDI4164MEV70SI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
access mode	FAST PAGE WITH EDO
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G50
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	50
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	NO
Maximum standby current	0.002 A
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL

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EDI4164MEV70SI Related Products

	EDI4164MEV70SI	EDI4164MEV70SM	EDI4164MEV50SI	EDI4164MEV50SM	EDI4164MEV60SI	EDI4164MEV60SM
Description	EDO DRAM, 4MX16, 70ns, CMOS, PDSO50,	EDO DRAM, 4MX16, 70ns, CMOS, PDSO50,	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	70 ns	70 ns	50 ns	50 ns	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	50	50	50	50	50	50
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	125 °C	85 °C	125 °C	85 °C	125 °C
Minimum operating temperature	-40 °C	-55 °C	-40 °C	-55 °C	-40 °C	-55 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
self refresh	NO	NO	NO	NO	NO	NO
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA	0.18 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	MILITARY	INDUSTRIAL	MILITARY	INDUSTRIAL	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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