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SMLJ51C

Description
Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size139KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

SMLJ51C Overview

Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

SMLJ51C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage69.3 V
Minimum breakdown voltage56.7 V
Breakdown voltage nominal value63 V
Maximum clamping voltage91.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51 V
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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