NN5118165ALTT-50 datasheet, PDF

NN5118165ALTT-50: DescriptionEDO DRAM, 1MX16, 50ns, CMOS, PDSO44; Categorystorage storage; File Size774KB，32 Pages; ManufacturerUnited Microelectronics Corporation; Websitehttp://www.umc.com/

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NN5118165ALTT-50 Overview

EDO DRAM, 1MX16, 50ns, CMOS, PDSO44

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	United Microelectronics Corporation
package instruction	TSOP, TSOP44/50,.46,32
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G44
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	44
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP44/50,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
self refresh	YES
Maximum standby current	0.00015 A
Maximum slew rate	0.19 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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