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NAND01GW4A0DZA6

Description
64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND01GW4A0DZA6 Overview

64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

NAND01GW4A0DZA6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time12000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee0
memory density1073741824 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
NAND FLASH
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY
s
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
s
Figure 1. Packages
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
TSOP48
12 x 20 mm
s
SUPPLY VOLTAGE
– 1.8V device: V
CC
= 1.65 to 1.95V
– 3.0V device: V
CC
= 2.7 to 3.6V
FBGA
s
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
s
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
s
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
s
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
s
s
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
s
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
s
s
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
s
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
s
DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
s
s
s
August 2003
For further information please contact the STMicroelectronics distributor nearest to you.
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