Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | Gentron Corp. |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum drain current (Abs) (ID) | 4.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Number of components | 1 |