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Datasheet> All Categories > storage> storage> N01L63W3AB5I
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N01L63W3AB5I

Description
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit
Categorystorage    storage   
File Size206KB，10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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N01L63W3AB5I Overview

1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit

N01L63W3AB5I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeBGA
package instruction6 X 8 MM, BGA-48
Contacts48
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
length8 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level1
Number of functions1
Number of terminals48
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height1.34 mm
Maximum standby current0.00001 A
Minimum standby current1.8 V
Maximum slew rate0.014 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm

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N01L63W3A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
64K × 16 bit
Overview
The N01L63W3A is an integrated memory device
containing a 1 Mbit Static Random Access Memory
organized as 65,536 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N01L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 64Kb x 16 SRAMs.
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Product Family
Part Number
N01L63W3AB
N01L63W3AT
N01L63W3AB2
N01L63W3AT2
Package Type
48 - BGA
44 - TSOP II
48 - BGA Green
44 - TSOP II Green
55ns @ 2.7V
-40
o
C to +85
o
C 2.3V - 3.6V 70ns @ 2.3V
2
µA
2 mA @ 1MHz
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Typical
Typical
Pin Configurations
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
V
CC
2
OE
UB
I/O
10
I/O
11
I/O
12
3
A
0
A
3
A
5
NC
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
NC
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Descriptions
Pin Name
A
0
-A
15
WE
CE
OE
LB
UB
I/O
0
-I/O
15
NC
V
CC
V
SS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Not Connected
Power
Ground
N01L63W3A
TSOP
I/O
14
I/O
13
I/O
15
NC
NC
A
8
48 Pin BGA (top)
6 x 8 mm
©2008 SCILLC. All rights reserved.
July 2008 - Rev.
9
Publication Order Number:
N01L63W3A/D

N01L63W3AB5I Related Products

N01L63W3AB5I N01L63W3A N01L63W3AB25IT N01L63W3AB5IT N01L63W3AT5I N01L63W3AT5IT
Description 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 隆驴 16 bit
Is it lead-free? Contains lead - - Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - conform to incompatible incompatible incompatible
Maker ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code BGA - BGA BGA TSOP2 TSOP2
package instruction 6 X 8 MM, BGA-48 - LFBGA, BGA48,6X8,30 6 X 8 MM, BGA-48 TSOP2-44 TSOP2-44
Contacts 48 - 48 48 44 44
Reach Compliance Code compliant - compli compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Maximum access time 70 ns - 70 ns 70 ns 70 ns 70 ns
I/O type COMMON - COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 - R-PBGA-B48 R-PBGA-B48 R-PDSO-G44 R-PDSO-G44
length 8 mm - 8 mm 8 mm 18.41 mm 18.41 mm
memory density 1048576 bit - 1048576 bi 1048576 bi 1048576 bi 1048576 bi
Memory IC Type STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 - 16 16 16 16
Humidity sensitivity level 1 - - 1 1 1
Number of functions 1 - 1 1 1 1
Number of terminals 48 - 48 48 44 44
word count 65536 words - 65536 words 65536 words 65536 words 65536 words
character code 64000 - 64000 64000 64000 64000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C -40 °C
organize 64KX16 - 64KX16 64KX16 64KX16 64KX16
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LFBGA - LFBGA LFBGA LSSOP LSSOP
Encapsulate equivalent code BGA48,6X8,30 - BGA48,6X8,30 BGA48,6X8,30 TSOP44,.46,32 TSOP44,.46,32
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE, FINE PITCH - GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 - - 225 225 225
power supply 3/3.3 V - 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.34 mm - 1.34 mm 1.34 mm 1.25 mm 1.25 mm
Maximum standby current 0.00001 A - 0.00001 A 0.00001 A 0.00001 A 0.00001 A
Minimum standby current 1.8 V - 1.8 V 1.8 V 1.8 V 1.8 V
Maximum slew rate 0.014 mA - 0.014 mA 0.014 mA 0.014 mA 0.014 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.3 V - 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 3 V - 3 V 3 V 3 V 3 V
surface mount YES - YES YES YES YES
technology CMOS - CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form BALL - BALL BALL GULL WING GULL WING
Terminal pitch 0.75 mm - 0.75 mm 0.75 mm 0.8 mm 0.8 mm
Terminal location BOTTOM - BOTTOM BOTTOM DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 6 mm - 6 mm 6 mm 10.16 mm 10.16 mm

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