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NAND256W4A1AZA1F

Description
16MX16 FLASH 3V PROM, 10000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-55
Categorystorage    storage   
File Size883KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

NAND256W4A1AZA1F Overview

16MX16 FLASH 3V PROM, 10000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-55

NAND256W4A1AZA1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA, BGA55,8X12,32
Contacts55
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time10000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B55
JESD-609 codee1
length10 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size2K
Number of terminals55
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA55,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size256 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size8K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
width8 mm
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
WSOP48 12 x 17 x 0.65mm
FBGA
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
HARDWARE DATA PROTECTION
– Program/Erase locked during Power
transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
July 2004
1/56
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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