N64S830HA
64 kb Low Power Serial
SRAMs
8 k x 8 Bit Organization
Introduction
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MARKING
DIAGRAMS
The ON Semiconductor serial SRAM family includes several
integrated memory devices including this 64 k serially accessed Static
Random Access Memory, internally organized as 8 k words by 8 bits.
The devices are designed and fabricated using ON Semiconductor’s
advanced CMOS technology to provide both high−speed performance
and low power. The devices operate with a single chip select (CS)
input and use a simple Serial Peripheral Interface (SPI) serial bus. A
single data in and data out line is used along with a clock to access data
within the devices. The N64S830HA devices include a HOLD pin that
allows communication to the device to be paused. While paused, input
transitions will be ignored. The devices can operate over a wide
temperature range of
−40°C
to +85°C and can be available in several
standard package offerings.
Features
TSSOP−8
T SUFFIX
CASE 948AL
B125
XXXXYZZ
B115
XXXXYZZ
SOIC−8
S SUFFIX
CASE 751BD
XXXX
Y
ZZ
= Date Code
= Assembly Code
= Lot Traceability
•
•
•
•
•
•
•
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Power Supply Range:
2.5 to 3.6 V
Very Low Standby Current:
As low as 1
mA
Very Low Operating Current:
As low as 3 mA
Simple Memory Control:
Single chip select (CS)
Serial input (SI) and serial output (SO)
Flexible Operating Modes:
Word read and write
Page mode (32 word page)
Burst mode (full array)
Organization:
8 k x 8 bit
Self Timed Write Cycles
Built−in Write Protection (CS High)
HOLD Pin for Pausing Communication
High Reliability:
Unlimited write cycles
Green SOIC and TSSOP
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ORDERING INFORMATION
Device
N64S830HAS22I
N64S830HAT22I
N64S830HAS22IT
N64S830HAT22IT
Package
SOIC−8
(Pb−Free)
TSSOP−8
(Pb−Free)
SOIC−8
(Pb−Free)
TSSOP−8
(Pb−Free)
Shipping
†
100 Units / Tube
100 Units / Tube
3000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. 12
1
Publication Order Number:
N64S830HA/D
N64S830HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
Rating
–0.3 to V
CC
+ 0.3
–0.3 to 4.5
500
–40 to 125
−40
to +85
260°C, 10 sec
Unit
V
V
mW
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Item
Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating
Current
Symbol
V
CC
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
Standby Current
I
SB
I
OH
=
−0.4
mA
I
OL
= 1 mA
CS = V
CC
, V
IN
= 0 to V
CC
CS = V
CC
, V
OUT
= 0 to V
CC
F = 1 MHz, I
OUT
= 0
F = 10 MHz, I
OUT
= 0
F = fCLK MAX, I
OUT
= 0
CS = V
CC
, V
IN
= V
SS
or V
CC
1
Test Conditions
3 V Device
Min
2.5
0.7 x V
CC
–0.3
V
CC
– 0.5
0.2
0.5
0.5
3
6
10
4
Typ
(Note 1)
Max
3.6
V
CC
+ 0.3
0.8
Unit
V
V
V
V
V
mA
mA
mA
mA
mA
mA
1. Typical values are measured at Vcc = Vcc Typ., T
A
= 25°C and are not 100% tested.
Table 5. CAPACITANCE
(Note 2)
Item
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
I/O
Test Condition
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C
Min
Max
7
7
Unit
pF
pF
2. These parameters are verified in device characterization and are not 100% tested
Table 6. TIMING TEST CONDITIONS
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1 V
CC
to 0.9 V
CC
5 ns
0.5 V
CC
CL = 100 pF
−40
to +85°C
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