NBXSBB022, NBXSBA022
3.3 V, 187.5 MHz LVPECL
Clock Oscillator
The NBXSBB022/NBXSBA022 single frequency crystal oscillator
(XO) is designed to meet today’s requirements for 3.3 V LVPECL
clock generation applications. The device uses a high Q fundamental
crystal and Phase Lock Loop (PLL) multiplier to provide 187.5 MHz,
ultra low jitter and phase noise LVPECL differential output.
This device is a member of ON Semiconductor’s PureEdget clock
family that provides accurate and precision clock solutions.
Available in 5 mm x 7 mm SMD (CLCC) package on 16 mm tape
and reel in quantities of 1,000. Frequency stability option available as
either 50 PPM NBXSBA022 or 20 PPM NBXSBB022.
Features
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•
•
•
•
•
•
•
6 PIN CLCC
TBD SUFFIX
CASE 848AB
LVPECL Differential Output
Uses High Q Fundamental Mode Crystal and PLL Multiplier
Ultra Low Jitter and Phase Noise
−
0.4 ps (12 kHz
−
20 MHz)
Hermetically Sealed Ceramic SMD Package
RoHS Compliant
Operating Range 3.3 V
±10%
Total Frequency Stability
−
±20
PPM or
±50
PPM
MARKING DIAGRAMS
NBXSBB022
187.5
AAWLYYWWG
NBXSBA022
187.5
AAWLYYWWG
Applications
•
12 Gb/s Ethernet Clock
NBXSBB022 = NBXSBB022 (±20 PPM)*
NBXSBA022 = NBXSBA022 (±50 PPM)
187.5
= Output Frequency (MHz)
AA
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb−Free Package
V
DD
6
CLK CLK
5 4
ORDERING INFORMATION
Device
Package
CLCC−6
(Pb−Free)
CLCC−6
(Pb−Free)
CLCC−6
(Pb−Free)
Shipping
†
1000/
Tape & Reel
1000/
Tape & Reel
100/
Tape & Reel
NBXSBB022LN1TAG*
NBXSBA022LN1TAG
NBXSBA022LNHTAG
Crystal
PLL
Clock
Multiplier
1
OE
2
NC
3
GND
Figure 1. Simplified Logic Diagram
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
* Please contact factory for availability
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2009
October, 2009
−
Rev. 2
1
Publication Order Number:
NBXSBB022/D
NBXSBB022, NBXSBA022
OE
NC
GND
1
2
3
6
5
4
V
DD
CLK
CLK
Figure 2. Pin Connections
(Top View)
Table 1. PIN DESCRIPTION
Pin No.
1
2
3
4
5
6
Symbol
OE
NC
I/O
LVTTL/LVCMOS
Control Input
−
Description
Output Enable Pin. When left floating pin defaults to logic HIGH and output is active.
See OE pin description Table 2.
No Connect.
Ground 0 V.
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Á Á
GND
CLK
CLK
V
DD
Power Supply
LVPECL Output
LVPECL Output
Power Supply
Non−Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Non−Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Positive power supply voltage. Voltage should not exceed 3.3 V
±10%.
Table 2. OUTPUT ENABLE TRI−STATE FUNCTION
OE Pin
Open
HIGH Level
LOW Level
Output Pins
Active
Active
High Z
Table 3. ATTRIBUTES
Characteristic
Input Default State Resistor
ESD Protection
Human Body Model
Machine Model
Value
170 kW
2 kV
200 V
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
V
DD
I
out
T
A
T
stg
T
sol
Parameter
Positive Power Supply
LVPECL Output Current
Operating Temperature Range
Storage Temperature Range
Wave Solder
See Figure 5
Condition 1
GND = 0 V
Continuous
Surge
Condition 2
Rating
4.6
25
50
−40
to +85
−55
to +120
260
Units
V
mA
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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NBXSBB022, NBXSBA022
Table 5. DC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C)
Symbol
I
DD
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
OUTPP
Characteristic
Power Supply Current (Note 2)
OE Input HIGH Voltage
OE Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage (Note 2)
V
DD
= 3.3 V
Output LOW Voltage (Note 2)
V
DD
= 3.3 V
Output Voltage Amplitude (Note 2)
OE
OE
2000
GND
−
300
−100
−100
V
DD
−1145
2155
V
DD
−1945
1355
680
Conditions
Min.
Typ.
80
Max.
100
V
DD
800
+100
+100
V
DD
−895
2405
V
DD
−1600
1700
Units
mA
mV
mV
mA
mA
mV
mV
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to V
DD
−2
V.
Table 6. AC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C) (Note 3)
Symbol
f
CLKOUT
Df
Characteristic
Output Clock Frequency
Frequency Stability
−
NBXSBB022
Frequency Stability
−
NBXSBA022
Phase−Noise Performance
f
CLKout
= 187.5 MHz
0°C to +70°C
−40°C
to +85°C
(Note 4)
100 Hz of Carrier
1 kHz of Carrier
10 kHz of Carrier
100 kHz of Carrier
1 MHz of Carrier
10 MHz of Carrier
t
jit
(F)
t
jitter
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
t
OE/OD
t
DUTY_CYCLE
t
R
t
F
t
start
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
1
st
Year
Every Year After 1
st
48
50
250
250
1
5
3
1
12 kHz to 20 MHz
1000 Cycles
1000 Cycles
10,000 Cycles
10,000 Cycles
−102
−118
−125
−126
−135
−160
0.4
2.1
13
1.4
8
0.9
10
35
5
25
200
52
Conditions
Min.
Typ.
187.5
±20
±50
Max.
Units
MHz
PPM
F
NOISE
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
ps
ps
ps
ps
ps
ns
%
ps
ps
ms
ppm
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to V
DD
−2
V.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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NBXSBB022, NBXSBA022
Figure 3. Typical Phase Noise Plot
Table 7. RELIABILITY COMPLIANCE
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Á
Á
Shock
Mechanical
Mechanical
Mechanical
Mechanical
MIL−STD−833, Method 2002, Condition B
MIL−STD−833, Method 2003
MIL−STD−202, Method 215
MIL−STD−833, Method 2007, Condition A
MIL−STD−833, Method 1011, Condition A
Solderability
Vibration
Solvent Resistance
Thermal Shock
Environment
Environment
Moisture Level Sensitivity
MSL1 260°C per IPC/JEDEC J−STD−020D
Parameter
Standard
Method
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NBXSBB022, NBXSBA022
NBXSBB022/NBXSBA022
CLK
Driver
Device
CLK
Z
o
= 50
W
50
W
50
W
D
Z
o
= 50
W
D
Receiver
Device
V
TT
V
TT
= V
DD
−
2.0 V
Figure 4. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D
−
Termination of ECL Logic Devices.)
Temperature (°C)
260
217
temp. 260°C
20
−
40 sec. max.
peak
3°C/sec. max.
ramp−up
6°C/sec. max.
cooling
175
150
pre−heat
reflow
60180 sec.
60150 sec.
Time
Figure 5. Recommended Reflow Soldering Profile
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