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NANDA9R3N0AZPC5F

Description
Memory Circuit, Flash+SDRAM, PBGA128, 12 X 12 MM, 1.10 MM HEIGHT, 0.65 MM PITCH, ROHS COMPLIANT, TFBGA-128
Categorystorage    storage   
File Size1MB,52 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
Download Datasheet Parametric View All

NANDA9R3N0AZPC5F Overview

Memory Circuit, Flash+SDRAM, PBGA128, 12 X 12 MM, 1.10 MM HEIGHT, 0.65 MM PITCH, ROHS COMPLIANT, TFBGA-128

NANDA9R3N0AZPC5F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA128,18X18,25
Contacts128
Reach Compliance Codeunknown
JESD-30 codeS-PBGA-B128
length12 mm
memory density1073741824 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Mixed memory typesFLASH+SDRAM
Number of functions1
Number of terminals128
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA128,18X18,25
Package shapeSQUARE
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.65 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NANDxxxxNx
Large page NAND flash memory and
low power SDRAM, 1.8/2.6 V MCP and PoP
Features
FBGA
n
MCP (multichip package) and PoP (package
on package)
– NAND flash memory
– 1-, 2-, 4-, 2x2-Gbit large page size NAND
flash memory
– 256-, 512-, 2x512-, 128+256/512-Mbit or
1-Gbit (x16/x32) SDR/DDR LPSDRAM
Temperature range: -30 up to 85 °C
Supply voltage
– NAND flash: V
DDF
= 1.7-1.95 V or 2.5-3.6 V
– LPSDRAM: V
DDD
= V
DDQD
= 1.7-1.95 V
Electronic signature
ECOPACK
®
packages
TFBGA107 10.5 × 13 × 1.2 mm
TFBGA137 10.5 x 13 x 1.2 mm
LFBGA137 10.5 x 13 x 1.4 mm
TFBGA149 10 × 13.5 × 1.2 mm
VFBGA160 15 x 15 x 1 mm
FBGA
n
n
n
n
VFBGA152 14 x 14 x 0.9 mm
TFBGA152 14×14 × 1.1 mm
TFBGA152 14 × 14 × 1.2 mm
TFBGA128 12 x 12 x 1.1 mm
Flash memory
n
Single or double data rate LPSDRAM
n
n
n
n
n
n
n
Nand interface
– x8 or x16 bus width
– Multiplexed address/data
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25/30 ns (min)
– Page program time: 200 µs (typ)
Copy back program mode
Fast block erase: 1.5/2 ms (typ)
Chip Enable ‘don’t care’
Status register
Data integrity
– 100 000 program/erase cycles
– 10 years data retention
Interface: x16/32 bus width
Deep power-down mode
1.8 V LVCMOS interface
Quad internal banks controlled by BA0, BA1
Wrap sequence: sequential/interleaved
Automatic and controlled precharge
Auto refresh and self refresh
– 8192 or 4096 (for 128 Mbits) refresh
cycles/64 ms
– Programmable partial array self refresh
– Auto temperature compensated self refresh
Device summary
NANDxxxxNx
NANDA8R3N0
NANDA9WxN1
NANDBAR4Nx
NANDB9R4Nx
NANDCAW4N1
NANDD3R4N5
NANDA9R3Nx
NANDB0R3N0
NANDB1R3N0
NANDC9R4N0
NANDCBR4N3
NANDDBR3N5
n
n
n
Table 1.
n
n
n
n
n
NANDA0R3N0
NANDA9R4Nx
NANDBAR3Nx
NANDB9R3N0
NANDBAW4N1
NANDC3R4N5
October 2008
Rev 12
1/52
www.numonyx.com
1

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