LL4150 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > LL4150

Preview

LL4150: Description0.3A,50V,Small Signal Switching Diode, Single, 50V, 0.3A, 0.74V, 0.01A, 4A, 0.1uA; File Size69KB，2 Pages; ManufacturerGalaxy Microelectronics

Download Datasheet Parametric View All

LL4150 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	LL4150	-	-	View	Buy Now

LL4150 Overview

0.3A,50V,Small Signal Switching Diode, Single, 50V, 0.3A, 0.74V, 0.01A, 4A, 0.1uA

LL4150 Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
Parts packaging code	MINI-MELF
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	0.5 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.006 µs
surface mount	YES
VRRM (V) max	50
IF (A) max	0.3
VF (V) max	0.74
Condition1_IF (A)	0.01
IFSM (A) max	4
IR (uA) max	0.1
Condition2_VR (V)	50
trr (ns) max	4
AEC Qualified	500
Maximum operating temperature	Yes
Minimum operating temperature	175
MSL level	-65
Is it lead-free?	Yes
Comply with Reach	Yes
RoHS compliant	Yes
ECCN code	EAR99
Package Outlines	MINI-MELF

Preview

Download Datasheet

View All

BL

FEATURES

GALAXY ELECTRICAL

LL4150

VOLTAGE RANGE: 50 V

CURRENT: 300 m A

MINI-MELF

Cathode indification

φ

1.5± 0.1

3.4

+0.3

-0.1

0.3± 0.1

Dimensions in millimeters

SMALL SIGNAL SWITCHING DIODE

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

MECHANICAL DATA

Case:

MINI-MELF,glass

case

Polarity: Color band denotes cathode

Weight:

Approx 0.031 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

MAXIMUM RATINGS

LL4150

Reverse voltage

Peak reverse voltage

Average forward rectified current V

R

=0V

Forward surge current at t=1 s

Power dissipation

Thermal resistance junction to ambient

Junction temperature

Storage temperature range

V

R

V

RM

I

O

I

FSM

P

tot

R

thja

T

j

T

STG

50

300

4.0

500

350

175

-65 --- + 175

UNITS

V

mA

A

mW

K/W

ELECTRICAL CHARACTERISTICS

MIN.

Forward voltage at I

F

=1mA

I

F

=10mA

I

F

=50mA

I

F

=100mA

I

F

=200mA

Leakage current @V

R

=50V,T

J

=25

V

R

=50V,T

J

=150

Capacitance at V

R

=0V,f=1MH

Z,

V

HF

=50mV

Reverse recovery time

I

F

=I

R

=(10to100mA),i

R

=0.1×I

R

L

=100

www.gmesemi.com

MAX.

0.62

0.74

0.86

0.92

1.0

0.1

100

2.5

4.0

UNITS

0.54

0.66

V

F

0.76

0.82

0.87

I

R

C

tot

t

rr

-

V

A

pF

ns

Document Number

LL4150

BL

GALAXY ELECTRICAL

1.

Recommended Resources

Charger circuit

Application circuit of LM1875-single power supply

Balanced modulator circuit

Zero point imbalance adjustment and 1G elimination circuit diagram A

TDA1904 power amplifier circuit

Circuit for charging batteries through solar energy

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components