1N5402G-E datasheet, PDF - EEWORLD Datasheet

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1N5402G-E: DescriptionGLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A; CategoryDiscrete semiconductor diode; File Size99KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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1N5402G-E Overview

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A

1N5402G-E Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	180 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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1N5400G-E THRU 1N5408G-E

GLASS PASSIVATED

JUNCTION RECTIFIER

VOLTAGE: 50V to 1000V

CURRENT: 3.0A

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250°C /10sec/0.375" lead length at 5 lbs tension

Glass Passivated chip

Halogen Free

DO - 201AD

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 Halogen Free Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

1N

540

0G-

E

50

35

50

1N

540

1G-

E

100

70

100

1N

540

2G-

E

200

140

200

1N

540

3G-

E

300

210

300

1N

540

4G-

E

400

280

400

3.0

180

1.1

30.0

5.0

100.0

40

30

-55 to +150

1N

540

5G-

E

500

350

500

1N

540

6G-

E

600

420

600

1N

540

7G-

E

800

560

800

1N

540

G-

E

1000

700

1000

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

3/8" lead length at T

L

=105°

C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

Maximum full load reverse current full cycle at

T

L

=75°

C

Maximum DC Reverse Current

Ta =25°

C

at rated DC blocking voltage

Ta =125°

C

Typical Junction Capacitance

(Note 1)

Operating Temperature

(Note 2)

Storage and Operating Junction Temperature

Note:

units

V

A

V

µA

pF

°

C/W

°

C

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir(av)

Ir

Cj

Rth(ja)

Tstg, Tj

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted

Rev.A2

www.gulfsemi.com

1N5402G-E Related Products

	1N5402G-E	1N5404G-E	1N5406G-E	1N5408G-E	1N5407G-E
Description	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	180 A	180 A	180 A	180 A	180 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	400 V	600 V	1000 V	800 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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