LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
2
)
Low Profile (0.9mm)
APPLICATIONS
The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 34 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 50 mA.
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3 %, and consumes 130 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for high-gain power amplifier
requirements for IEEE 802.11b/g
applications
.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
LX5512E
LX5512E
PACKAGE ORDER INFO
Plastic MLPQ
LQ
16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5512E-LQT)
Copyright
2000
Rev. 1.2a, 2004-04-09
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
WWW .
Microsemi
.C
OM
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power............................................................................................. 5dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
GND
GND
VC2
VC1
VC3
RF OUT
RF OUT
DET PWR
12
11
1
0
9
1
3
14 15 16
*
1
2
3
4
GND
RF IN
RF IN
VB1
8
7
6
5
VB2
VB3
DET REF
VCC
THERMAL DATA
* Pad is Ground
LQ
Plastic MLPQ 16-Pin
10°C/W
50°C/W
LQ P
ACKAGE
(Bottom View)
THERMAL RESISTANCE
-
JUNCTION TO
C
ASE
,
θ
JC
THERMAL RESISTANCE
-
JUNCTION TO
A
MBIENT
,
θ
JA
FUNCTIONAL PIN DESCRIPTION
Name
RF IN
VB1
VB2
VB3
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the
first stage.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor
bridge.
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10
nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting
in a single supply voltage (referred to as Vc).
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage..
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor,
followed by a 10 Ohm resistor
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass
capacitor, followed by a 5 Ohm resistor
Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass
capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as Vc
Power detector reference output pin should be terminated with a 100 kOhm loading resistor
Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the
power amplifier..
VCC
RF OUT
VC1
VC2
VC3
DET_REF
DET_PWR
GND
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
Copyright
2000
Rev. 1.2a, 2004-04-09
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
ELECTRICAL CHARACTERISTICS
Test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, T
A
= 25°C, unless otherwise specified
Parameter
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
nd
2 side lobe at 23 dBm
Ramp-On Time
Differential Detector response
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OM
Symbol
f
Gp
Test Conditions
LX5512E
Min
Typ
Max
2.4
2.5
34
3.0
130
50
1.6
34
1.5
1.5
8
10
-50
-40
-40
200
-50
100
1.5
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
64GQAM / 54Mbps
Ic_total
Icq
Iref
S21
∆S21
∆S21
S11
S22
S12
For Icq = 50mA
Over 100MHz
0°C to +70°C
t
ON
Pout = 19dBm
Pout = 19dbm
11 Mbps CCK
11 Mbps CCK
10 ~ 90%
19 dBm OFDM, 100kOhm’s
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
LECTRICALS
E
LECTRICALS
Copyright
2000
Rev. 1.2a, 2004-04-09
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
CHARACTERISTIC CURVES
WWW .
Microsemi
.C
OM
50
40
30
20
10
0
-10
-20
-30
-40
-50
m1
m7
freq=2.400GHz
freq=2.500GHz
dB(S(2,1))=33.462
dB(S(2,1))=35.376
m1 m7
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 1 –
S-Parameter
(VC = 3.3V, VREF = 2.9V, Icq = 50mA)
2.4 GHz
7
6
5
EVM_PA /[%]
4
3
2
2.45 GHz
2.5 GHz
G
RAPHS
G
RAPHS
1
0
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 2 –
EVM with 54Mb/s 64 QAM OFDM
(Vc = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright
2000
Rev. 1.2a, 2004-04-09
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
CHARACTERISTIC CURVES
WWW .
Microsemi
.C
OM
2.4 GHz
-45
2.45 GHz
2.5 GHZ
-47.5
ACP_30 MHz /[dBc]
-50
-52.5
-55
-57.5
-60
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 3 –
ACP with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
2.4 GHz
175
2.45 GHZ
2.5 GHZ
150
CURRENT_3.3V /mA
125
100
75
G
RAPHS
G
RAPHS
50
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 4 –
Current with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright
2000
Rev. 1.2a, 2004-04-09
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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