BA159G datasheet, PDF - EEWORLD Datasheet

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BA159G: Description1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size72KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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BA159G Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159G Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.25 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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BA157G THRU BA159G

GLASS PASSIVATED

FAST RECOVERY RECTIFIER

VOLTAGE: 400 TO 1000V

CURRENT: 1.0A

FEATURE

Molded case feature for auto insertion

High current capability

Low leakage current

Fast switching capability

High temperature soldering guaranteed

250°C /10sec/0.375" lead length at 5 lbs tension

Glass Passivated chip

DO - 41\DO- 204AL

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

3/8" lead length at Ta =55°

C

Peak Forward Surge Current 8.3ms single

Half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

Rated forward current

Maximum DC Reverse Current

Ta =25°

C

At rated DC blocking voltage

Ta =125°

C

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir

Cj

Rth(ja)

Trr

Tstg, Tj

150

-55 to +150

BA157G

400

280

400

BA158G

600

420

600

1.0

30.0

1.25

5.0

100.0

15.0

55

250

BA159G

1000

700

1000

units

V

A

V

µA

pF

°

C/W

nS

°

C

Maximum Reverse Recovery Time (Note 3)

Storage and Operating Junction Temperature

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

Test Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

Rev.A1

www.gulfsemi.com

BA159G Related Products

	BA159G	BA157G	BA158G
Description	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	O-PALF-W2	PLASTIC, DO-41, 2 PIN
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-204AL	DO-204AL	DO-204AL
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	400 V	600 V
Maximum reverse recovery time	0.25 µs	0.15 µs	0.15 µs
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL

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