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IRF6720S2TRPBF

Description
23 A, 40 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size2MB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRF6720S2TRPBF Overview

23 A, 40 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET

IRF6720S2TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionHALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)77 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)35 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N2
JESD-609 codee1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)17 W
Maximum pulsed drain current (IDM)92 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Benchmark MOSFETs | Selection Guide
Broad Portfolio of MOSFETS Targeting Multiple Market Segments
Industrial
Power Supply
Key Differentiators
• Industry brand leader in MOSFETs
• Leading performance MOSFETs
• Industry reputation for quality
• Broad product portfolio
• Widest range of packages up to 250V
Consumer/ Data
Processing
Key Products
• Discrete HEXFET
®
MOSFETs
• Dual HEXFET
®
MOSFETs
• FETKY
®
For a full list of the automotive MOSFETs please visit www.irf.com
Power QFN
FEATURES
• Industry brand leader in
MOSFET
• Benchmark thermal
performance
• Lowest R
DS(ON)
DirectFET
Large Can
DirectFET
®
Medium Can
DirectFET
®
®
30% larger
die than
D
2
Pak
and a 60%
reduction in
board space
Same die
size as
D-Pak,
54%
reduction in
board space
D
2
Pak
D-Pak
PQFN 5x6
Small Can
DirectFET
®
40% smaller
footprint
than
SO-8
SO-8
International Rectifier’s DirectFET
®
power package is a breakthrough
surface-mount power MOSFET packaging technology designed for
efficient topside cooling in combination with improved bottom-side
cooling, the new package can be cooled on both sides to cut part
count by up to 60%, and board space by as much as 50% compared to
devices in standard or enhanced SO-8 packages.
THE IR ADVANTAGE
Competitive R
DS(ON)
comparison made Q4 09
International Rectifier will release an expansive
portfolio of PQFN benchmark MOSFETs in early CY10.
Increases current density
Cuts MOSFET part count by 60%
Reduces PCB space by 50%
Up to 50°C lower operating temperature
increases reliability
Lower total system cost
Ultra low package resistance and
inductance
Industry lowest On-Resistance
Compatible with existing surface mount
techniques
Double-sided cooling for superior
thermal performance
For additional information on International Rectifier’s MOSFETs and other products call +1.800.981.8699 or +49.6102.884.311 or visit us at
www.irf.com

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