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NCP3420

Description
HALF BRDG BASED MOSFET DRIVER, PDSO8
Categorysemiconductor    Analog mixed-signal IC   
File Size141KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NCP3420 Overview

HALF BRDG BASED MOSFET DRIVER, PDSO8

NCP3420 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature0.0 Cel
Maximum supply voltage 113.2 V
Minimum supply voltage 14.6 V
Rated supply voltage 112 V
Processing package descriptionLead FREE, SOP-8
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingtin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelother
high end driverYes
Interface TypeHalf-bridge FET driver
NCP3420
MOSFET Driver with Dual
Outputs for Synchronous
Buck Converters
The NCP3420 is a single Phase 12 V MOSFET gate driver
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. The high−side and
low−side driver is capable of driving a 3000 pF load with a 30 ns
propagation delay and a 20 ns transition time.
With a wide operating voltage range, high or low side MOSFET
gate drive voltage can be optimized for the best efficiency. Internal
adaptive nonoverlap circuitry further reduces switching losses by
preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as
high as 35 V, with transient voltages as high as 40 V. Both gate outputs
can be driven low by applying a low logic level to the Output Disable
(OD) pin. An Undervoltage Lockout function ensures that both driver
outputs are low when the supply voltage is low, and a Thermal
Shutdown function provides the IC with overtemperature protection.
Features
http://onsemi.com
MARKING
DIAGRAMS
8
8
1
SO−8
D SUFFIX
CASE 751
3420
ALYW
G
8
1
1
1
A
L
Y
W
G
DFN8
MN SUFFIX
CASE 506BJ
3420
ALYWG
G
Thermal Shutdown for System Protection
Internal Pulldown Resistor Suppresses Transient Turn On of Either
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
MOSFET
Anti Cross−Conduction Protection Circuitry
One Input Signal Controls Both the Upper and Lower Gate Outputs
Output Disable Control Turns Off Both MOSFETs
Complies with VRM10.x and VRM11.x Specifications
Undervoltage Lockout
Thermally Enhanced Package Available
These are Pb−Free Devices
PIN CONNECTIONS
BST
IN
OD
V
CC
1
BST
IN
OD
V
CC
(Top View)
8
DRVH
SWN
PGND
DRVL
1
8
DRVH
SWN
PGND
DRVL
ORDERING INFORMATION
Device
NCP3420DR2G
NCP3420MNR2G
Package
SO−8
(Pb−Free)
DFN8
(Pb−Free)
Shipping
2500 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
December, 2009
Rev. 3
1
Publication Order Number:
NCP3420/D
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