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FDP050AN06A0_NL

Description
18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FDP050AN06A0_NL Overview

18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

FDP050AN06A0_NL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220AB
package instructionTO-220AB, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)470 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.005 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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FDP050AN06A0_NL Related Products

FDP050AN06A0_NL FDB050AN06A0 FDP050AN06A0
Description 18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN 18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 2 PIN 18A, 60V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Rochester Electronics Rochester Electronics Rochester Electronics
Parts packaging code TO-220AB D2PAK TO-220AB
package instruction TO-220AB, 3 PIN TO-263AB, 2 PIN TO-220AB, 3 PIN
Contacts 3 4 3
Reach Compliance Code unknown unknown unknown
Avalanche Energy Efficiency Rating (Eas) 470 mJ 470 mJ 470 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (ID) 18 A 18 A 18 A
Maximum drain-source on-resistance 0.005 Ω 0.005 Ω 0.005 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT APPLICABLE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO YES NO
Terminal surface TIN MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30 NOT APPLICABLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level - 1 NOT APPLICABLE
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