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FJAF6806D
FJAF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BV
CBO
= 1500V
• High Switching Speed : t
F
(typ.) =0.1µs
• For Color TV
TO-3PF
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
50Ω typ.
E
Rating
1500
750
6
6
12
50
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
C
=25°C
unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
F
t
STG
*
t
F
*
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Storage Time
Fall Time
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
E
=300mA, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=4A
I
C
=4A, I
B
=1A
I
C
=4A, I
B
=1A
I
F
= 4.5A
V
CC
=200V, I
C
=4A, R
L
=50
Ω
I
B1
=1.0A, I
B2
= - 2.0A
40
6
8
4
7
5
1.5
2
3
0.2
V
V
V
µs
µs
Min
Typ
Max
1
10
200
Units
mA
µA
mA
V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
2.5
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJAF6806D
Typical Characteristics
8
100
7
V
CE
= 5V
I
B
= 2.0A
Ta = 25 C
o
o
I
C
[A], COLLECTOR CURRENT
h
FE
, DC CURRENT GAIN
6
Ta = 125 C
5
I
B
= 0.8A
4
I
B
= 0.6A
I
B
= 0.4A
I
B
= 0.2A
10
Ta = - 25 C
o
3
2
1
0
0
2
4
6
8
10
1
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
V
CE
(sat) [V], SATURATION VOLTAGE
Ta = - 25 C
1
o
o
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 5 I
B
Ta = 125 C
o
I
C
= 3 I
B
Ta = 125 C
o
1
Ta = 25 C
Ta = 25 C
o
Ta = - 25 C
0.1
o
0.1
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
V
CE
= 5 V
8
t
STG
& t
F
[
µ
s], SWITCHING TIME
I
C
[A], COLLECTOR CURRENT
t
STG
1
6
4
Ta = 25 C
o
2
Ta = 125 C
Ta = - 25 C
o
o
t
F
V
CC
= 200V,
I
C
= 4A, I
B1
= 1A
0.1
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
BE
[V], BASE-EMITTER ON VOLTAGE
I
B2
[A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJAF6806D
Typical Characteristics
(Continued)
10
t
STG
& t
F
[
µ
s], SWITCHING TIME
t
STG
t
STG
& t
F
[
µ
s], SWITCHING TIME
V
CC
= 200V,
I
C
= 4A, I
B2
= - 2A
t
STG
1
1
t
F
t
F
V
CC
= 200V,
I
B1
= 1A,I
B2
= - 2A
0.1
1
10
0.1
1
I
B1
[A], FORWARD BASE CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
15
100
I
C
[A], COLLECTOR CURRENT
12
I
C
[A], COLLECTOR CURRENT
R
B2
= 0, I
B1
= 15A
V
CC
= 30V, L = 200
µ
H
I
C
(Pulse)
10
t = 100ms
t = 10ms
t = 1ms
I
C
(DC)
9
1
6
V
BE
(off) = -3V
3
0.1
T
C
= 25 C
Single Pulse
0.01
1
10
100
1000
10000
o
1
10
100
1000
10000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Forward Bias Safe Operating Area
80
70
P
D
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 11. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJAF6806D
Package Demensions
TO-3PF
5.50
±0.20
4.50
±0.20
15.50
±0.20
ø3.60
±0.20
3.00
±0.20
(1.50)
10.00
±0.20
10
°
26.50
±0.20
23.00
±0.20
16.50
±0.20
14.50
±0.20
0.85
±0.03
16.50
±0.20
2.00
±0.20
14.80
±0.20
2.00
±0.20
2.00
±0.20
4.00
±0.20
0.75
–0.10
+0.20
2.00
±0.20
2.50
±0.20
2.00
±0.20
3.30
±0.20
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
0.90
–0.10
+0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
1.50
±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
22.00
±0.20
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