FZT790ATC datasheet, PDF - EEWORLD Datasheet

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FZT790ATC: DescriptionPower Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size95KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FZT790ATC Overview

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FZT790ATC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-based maximum capacity	60 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	300
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.75 V

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SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Very low equivalent on-resistance;

CE(sat)

125mΩ at 2A

* Gain of 200 at I

=1 Amp and very low saturation voltage

APPLICATIONS

* DC-DC converters, Siren drivers.

COMPLEMENTARY TYPE -

FZT690B

PARTMARKING DETAIL -

FZT790A

SYMBOL

CBO

CEO

EBO

tot

stg

TYP.

-70

-60

-8.5

-0.1

-10

-0.1

-0.15

-0.30

-0.40

-0.8

-0.75

300

250

200

150

100

600

800

-0.25

-0.45

-0.75

-1.0

VALUE

-50

-40

-5

-6

-3

-55 to +150

MAX. UNIT

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

Switching Times

CBO

EBO

CE(sat)

BE(sat)

MIN.

-50

-40

-5

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

Breakdown Voltages

CONDITIONS.

=-100

=-10mA*

=-100

=-30V

=-30V,

Tamb

=100°C

=-4V

=-500mA, I

=-5mA*

=-1A, I

=-10mA*

=-2A, I

=-50mA*

=-1A, I

=-10mA*

=-1A, V

=-2V*

=-10mA, V

=-2V

=-500mA, V

=-2V*

=-1A, V

=-2V*

=-2A, V

=-2V*

Base-EmitterTurn-OnVoltage V

BE(on)

obo

off

MHz

=-50mA, V

=-5V

f=50MHz

=-10V,f=1MHz

=-500mA,

=-50mA,

=-50mA, V

=-10V

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

Spice parameter data is available upon request for this device

3 - 248

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