FFPF06F150S
FFPF06F150S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• Suitable for damper diode in horizontal
deflection circuits
1
2
TO-220F
1. Cathode
2. Anode
DAMPER DIODE
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
T
C
=25°C unless otherwise noted
°
Value
1500
@ T
C
= 125°C
6
60
- 65 to +150
Units
V
A
A
°C
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
T
C
=25
°
C unless otherwise noted
Min.
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1.6
1.4
µA
7
60
170
350
17
ns
ns
V
Units
V
Value
4.0
Units
°C/W
Electrical Characteristics
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 6A
I
F
= 6A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
Maximum Forward Recovery Voltage
I
RM
*
t
rr
t
fr
V
FRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Rev. F, September 2000
FFPF06F150S
Typical Characteristics
50
100
[A]
10
[
µ
A]
10
T
J
= 125 C
1
T
J
= 125 C
o
Reverse Current , I
Forward Current , I
R
F
o
1
0.1
T
J
= 100 C
o
o
T
J
= 25 C
o
0.01
T
J
= 25 C
0.1
0.0
0.001
0.4
0.8
1.2
1.6
2.0
0
300
600
900
1200
1500
Forward Voltage , V
F
[V]
Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
120
400
Figure 2. Typical Reverse Current
vs. Reverse Voltage
100
[ns]
Typical Capacitance
at 0V = 100 pF
di/dt = 50A/
µ
s
300
Capacitance , Cj [pF]
80
Reverse Recovery Time , t
rr
60
200
40
di/dt = 100A/
µ
s
100
20
0
0.1
0
1
10
100
1
2
3
4
5
6
7
8
9
10
Reverse Voltage , V
R
[V]
Forward Current , I
F
[A]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
10
9
8
7
6
[nC]
Stored Recovery Charge , Q
1500
Average Forward Current , I
di/dt = 100A/
µ
s
rr
F(AV)
[A]
2000
C
D
1000
di/dt = 50A/
µ
s
5
4
3
2
1
0
80
100
120
o
500
0
1
2
3
4
5
6
7
8
9
10
140
160
Forward Current , I
F
[A]
Case Temperature , T
C
[ C]
Figure 5. Typical Stored Charge
vs. Forward Current
©2000 Fairchild Semiconductor International
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
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DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
®
DISCLAIMER
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GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
Embedded System
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