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FFPF10U30DNTU_NL

Description
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, LEAD FREE, TO-220F, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size73KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FFPF10U30DNTU_NL Overview

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, LEAD FREE, TO-220F, 3 PIN

FFPF10U30DNTU_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-220F
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREEWHEELING DIODE
applicationULTRA FAST SOFT RECOVERY POWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.06 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
FFPF10U30DN
FFPF10U30DN
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
Power switching circuits
Output rectifiers
Freewheeling diodes
Switching mode power supply
TO-220F
1
2
3
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25°C unless otherwise noted
°
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T
C
= 100°C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
300
10
100
- 65 to +150
Units
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Value
2.1
Units
°C/W
Electrical Characteristics
(per diode) T
C
=25
°
C unless otherwise noted
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=10A, di/dt = 200A/µs)
Avalanche Energy
Min.
T
C
= 25
°C
T
C
= 100
°C
T
C
= 25
°C
T
C
= 100
°C
-
-
-
-
-
-
-
1.0
Typ.
-
-
-
-
-
-
-
-
Max.
1.2
1.1
µA
10
100
60
4.5
135
-
ns
A
nC
mJ
Units
V
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, March 2001

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