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FYPF1545DN

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size181KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

FYPF1545DN Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB

FYPF1545DN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionTO-220F, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREEWHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
FYPF1545DN
FYPF1545DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
1 2
3
TO-220F
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
°
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T
C
= 110°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
45
45
15
100
-65 to +150
Units
V
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
4.0
Units
°C/W
Electrical Characteristics
(per diode)
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 7.5A
I
F
= 7.5A
I
F
= 15A
I
F
= 15A
Maximum Instantaneous Reverse Current
@ rated V
R
Value
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
0.55
0.49
0.70
0.65
mA
1
60
Units
V
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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