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BYV26EGP-15

Description
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE拢潞1000V CURRENT: 1.0A
CategoryDiscrete semiconductor    diode   
File Size77KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric View All

BYV26EGP-15 Overview

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE拢潞1000V CURRENT: 1.0A

BYV26EGP-15 Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BYV26EGP-15
SINTERED GLASS JUNCTION
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE:1000V
CURRENT: 1.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=55°C
with no thermal run away
Typical Ir<0.1µA
DO-15
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse avalanche breakdown voltage at IR = 0.1 mA
Maximum Average Forward Rectified Current 3/8”lead
length at Ta =55°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
Maximum Forward Voltage at rated Forward Current and
50°C
Non-repetitive peak reverse avalanche energy (Note 1)
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =150°C
Maximum Reverse Recovery Time
(Note 2)
Typical Junction Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
Vrrm
Vrms
Vdc
V
(BR)R
If(av)
Ifsm
Vf
Ersm
Ir
Trr
Cj
Rth(ja)
Tstg, Tj
BYV26EGP-15
1000
700
1000
1100min
1.0
30
2.5
10
5.0
150.0
75
15.0
55.0
-65 to +175
units
V
V
V
V
A
A
V
mJ
µA
nS
pF
°C
/W
°C
Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off
2.Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com

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