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SHF1406SMSTXV

Description
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SHF1406SMSTXV Overview

Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

SHF1406SMSTXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionE-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum output current4 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.03 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1402 - SHF1406
and
SHF1402SMS - SHF1406SMS
4 AMP
200–600 Volts
30 nsec
HYPER FAST RECTIFIER
Features:
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SHF14 __ __ __
L
L
Screening
= None
TX = TX Level
TXV = TXV Level
S = S Level
2/
L
Package
___ = Axial Leaded
SMS = Surface Mount Square Tab
Voltage
02 = 200 V
03 = 300 V
04 = 400 V
05 = 500 V
06 = 600 V
Guaranteed High Temp. trr: 50 nsec Max (Axial) trr:
60nsec Max (SMS)
Hyper Fast Recovery: 30 nsec Max.
PIV to 600 Volts
Void Free Construction
Hermetically Sealed
Low Reverse Leakage Current
For High Efficiency Applications
Replacement for 1N6626 Series where faster trr is
required
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SHF1402
SHF1403
SHF1404
SHF1405
SHF1406
Symbol
V
RRM
V
RWM
V
R
Io
I
FSM
I
FRM
Top & Tstg
Junction to Lead, L = 3/8 "
Junction to End
Axial Leaded
Value
200
300
400
500
600
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 55ºC, L=3/8”)
Surge Current
(Single 8.3 ms Pulse, Half Sine Superimposed on Io, T
A
= 55ºC)
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 55ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
4
75
20
-65 to +175
20
14
SMS (Square)
Amps
Amps
Amps
ºC
ºC/W
R
θJL
R
θJE
Notes:
1/ For Ordering Information, Price, Operating
Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening
Flows Available on Request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0023B
DOC

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