KTB764O datasheet, PDF - EEWORLD Datasheet

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KTB764O: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size360KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTB764O Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN

KTB764O Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-92
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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SEMICONDUCTOR

TECHNICAL DATA

VOLTAGE REGULATOR, RELAY,

LAMP DRIVER, INDUSTRIAL USE

B

KTB764

TRIPLE DIFFUSED PNP TRANSISTOR

D

FEATURES

・High

Voltage : V

CEO

=-50V(Min.).

・High

Current : I

C

(Max.)=-1A.

・High

Transition Frequency : f

T

=150MHz(Typ.).

・Wide

Area of Safe Operation.

・Complementary

to KTD863.

F

C

P

DEPTH:0.2

A

S

Q

K

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

_

14.00 + 0.50

0.35 MIN

_

0.75 + 0.10

4

G

J

F

H

M

E

M

R

H

MAXIMUM RATING (Ta=25℃)

O

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

DC

Collector Current

Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

RATING

-60

-50

-5

-1

UNIT

V

A

1

N

2

3

N

H

L

1. EMITTER

2. COLLECTOR

3. BASE

25

1.25

Φ1.50

0.10 MAX

_

12.50 + 0.50

1.00

-2

1

150

-55½150

W

℃

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

h

FE

(2)

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

V

(BR)CEO

V

CE(sat)

V

BE(sat)

f

T

C

ob

V

CE

=-2V, I

C

=-1A

I

C

=-1mA, I

B

=0

I

C

=-500mA, I

B

=-50mA

I

C

=-500mA, I

B

=-50mA

V

CE

=-10V, I

C

=-50mA

V

CB

=-10V, I

E

=0, f=1MHz

30

-50

-

-0.2

-0.85

150

20

-

-0.7

-1.2

-

V

MHz

pF

SYMBOL

I

CBO

I

CEO

I

EBO

h

FE

(1)

TEST CONDITION

V

CB

=-50V, I

E

=0

V

CE

=-50V, I

D

=0

V

EB

=-4V, I

C

=0

V

CE

=-2V, I

C

=-50mA

MIN.

-

60

TYP.

-

MAX.

-1

320

UNIT

μ

A

μ

A

μ

A

Note : h

FE

(1) Classification O:60½120, Y:100½200, GR:160½320

2012. 5. 4

Revision No : 3

D

1/3

KTB764O Related Products

	KTB764O	KTB764GR	KTB764Y
Description	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	160	100
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz

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