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Datasheet> All Categories > Discrete semiconductor> The transistor> KTC3072D-O
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KTC3072D-O

Description
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size398KB，3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTC3072D-O Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3

KTC3072D-O Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
Low Saturation Voltage : V
CE(sat)
= 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
40
20
7
5
8
1.0
150
-55 150
UNIT
V
V
V
A
W
H
F
1
2
F
3
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
K
E
M
Q
D
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
A
C
I
J
Note 1: Pulse Width 100mS, Duty Cycle 30%
Q
K
D
O
H
G
P
F
F
L
1
2
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_
6.60
+
0.2
_
6.10
+
0.2
_
5.0
+
0.2
_
1.10
+
0.2
_
9.50
+
0.6
_
2.30
+
0.1
_
0.76
+
0.1
1.0 MAX
_
2.30
+
0.2
_
0.5
+
0.1
_
2.0
+
0.2
_
0.50
+
0.1
_
1.0
+
0.1
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
E
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note 1 : h
FE
(1) Classification
O:120 240, Y:200
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
(1)(Note1)
h
FE
(2)
V
CE(sat)
f
T
C
ob
TEST CONDITION
I
C
=100 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=60mA(Pulse)
V
CE
=6V, I
C
=50mA
V
CB
=20V, f=1MHz, I
E
=0
MIN.
40
20
7
-
-
120
100
-
20
-
IPAK
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
400, GR:350 700
2003. 3. 27
Revision No : 3
1/3

KTC3072D-O Related Products

KTC3072D-O KTC3072L-O KTC3072L-GR KTC3072L-Y KTC3072D-Y KTC3072D-GR
Description Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, IPAK-3 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IPAK-3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A 5 A 5 A 5 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 350 200 200 350
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1
Number of terminals 2 3 3 3 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W 1.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO NO YES YES
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Maker KEC KEC KEC KEC - -
Base Number Matches - 1 1 1 1 1

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Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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