SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A
KTC3072D
EPITAXIAL PLANAR NPN TRANSISTOR
I
J
FEATURES
・Low
Saturation Voltage : V
CE(sat)
= 0.4V(Max)(Ic=3A)
・High
Performance at Low Supply Voltage.
C
K
E
・Suffix
U
:
Qualified to AEC-Q 101
ex) KTC3072D-O-RTF/HU
H
F
F
2
3
P
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
RATING
40
20
7
5
A
8
1.0
150
-55½150
W
℃
℃
UNIT
V
V
V
1
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
_
1.10 + 0.2
_
2.70 + 0.2
_
2.30 + 0.1
1.00 MAX
_
2.30 + 0.2
_
0.5 + 0.1
_
2.00 + 0.20
_
0.50 + 0.10
_
0.91+ 0.10
_
0.90 + 0.1
_
1.00 + 0.10
0.95 MAX
B
M
Q
D
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width≦100mS, Duty Cycle≦30%
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note 1 : h
FE
(1) Classification
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
(1)(Note1)
h
FE
(2)
V
CE(sat)
f
T
C
ob
TEST CONDITION
I
C
=100μ I
E
=0
A,
I
C
=1mA, I
B
=0
I
E
=10μ I
C
=0
A,
V
CB
=20V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=60mA(Pulse)
V
CE
=6V, I
C
=50mA
V
CB
=20V, f=1MHz, I
E
=0
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
V
MHz
pF
UNIT
V
V
V
nA
nA
O:120½240, Y:200½400, GR:350½700
2018. 04. 10
Revision No : 4
O
1/3
KTC3072D
COLLECTOR POWER DISSIPATION P
C
(W)
Pc - Ta
1.6
COLLECTOR CURRENT I
C
(A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ta
=2
5
C
I
C
- V
CE
3.4
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
0.4
0.8
1.2
1.6
2.0
Ta=25 C
7mA
6mA
5mA
4mA
3mA
2mA
I
B
=1mA
2.4
2.8
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
I
C
- V
BE
8
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=10V
Ta=25 C
I
C
- V
CE(sat)
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
/I
B
=30
Ta=25 C
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
h
FE
- I
C
700
600
500
400
300
200
100
0
0.01
0.03
0.1
0.3
1
3
10
V
CE
=2V
Ta=25 C
f
T
-
TRANSITION FREQUENCY f
T
(MHz)
400
I
E
V
CE
=6V
Ta=25 C
800
DC CURRENT GAIN h
FE
300
200
100
0
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
2018. 04. 10
Revision No : 4
2/3
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