KSP13/14
DARLINGTON TRANSISTOR
•
Collector-Emitter Voltage: V
CES
=30V
•
Collector Dissipation: P
C
(max)=625mW
NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
J
T
STG
Rating
30
30
10
500
625
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSP13
: KSP14
: KSP13
: KSP14
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Symbol
BV
CES
I
CBO
I
EBO
h
FE
Test Conditions
I
C
=100µA, I
B
=0
V
CB
=30V, I
E
=0
V
BE
=10V, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
(sat)
V
BE
(on)
f
T
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
f=100MHz
Min
30
100
100
5,000
10,000
10,000
20,000
1.5
2.0
125
V
V
MHz
Max
Unit
V
nA
nA
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. B
©
1999 Fairchild Semiconductor Corporation
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