KBPC3510 datasheet, PDF - EEWORLD Datasheet

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KBPC3510: Description35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size603KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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KBPC3510 Overview

35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

KBPC3510 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Gulf Semiconductor
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	400 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	35 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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KBPC35005 THRU KBPC3510

SINGLE PHASE SILICON

BRIDGE RECTIFIER

VOLTAGE: 50 TO 1000V

CURRENT: 35.0A

FEATURE

Surge overload rating: 400 A peak

High case dielectric strength

1/4”Universal fast on terminal

and

φ40ml

lead-wire available

KBPC/KBPCW

MECHANICAL DATA

Polarity: Polarity symbol marked on body

Mounting: Hole thru

#

8 screw

Case: metal or plastic

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,

for capacitive load, derate current by 20%)

SYMBOL

KBPC35

005

KBPC35

01

KBPC35

02

KBPC35

04

KBPC35

06

KBPC35

08

KBPC35

10

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current at Tc=55

°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

forward current 17.5A DC

Maximum DC Reverse Current

at rated DC blocking voltage

Operating Temperature Range

Ta =25

°C

Ta =100

°C

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir

Tj

Tstg

50

35

50

100

70

100

200

140

200

400

280

400

35.0

400.0

1.1

10.0

500.0

-55 to +150

600

420

600

800

560

800

1000

700

1000

V

A

V

µA

*

Storage and Operation Junction Temperature

°C

Rev.4

www.gulfsemi.com

KBPC3510 Related Products

	KBPC3510	KBPC35005	KBPC3501	KBPC3502	KBPC3506	KBPC3504	KBPC3508
Description	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	5 A, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
Reach Compliance Code	unknow	unknown	unknown	unknow	unknown	unknow	unknow
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A	400 A	400 A
Number of components	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	1000 V	50 V	100 V	200 V	600 V	400 V	800 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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