RGP30G datasheet, PDF - EEWORLD Datasheet

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RGP30G: Description3 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size128KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/; Environmental Compliance

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RGP30G Overview

3 A, SILICON, RECTIFIER DIODE

RGP30G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Gulf Semiconductor
package instruction	PLASTIC PACKAGE-2
Reach Compliance Code	unknow
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.15 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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RGP30A THRU RGP30M

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE:50 TO 1000V

CURRENT: 3.0A

FEATURE

High temperature metallurgically bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta

=55°C

with no thermal run away

Typical Ir<0.1µA

DO-201AD

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

RGP

30A

50

35

50

RGP

30B

100

70

100

RGP

30D

200

140

200

RGP

30G

400

280

400

3.0

125

1.3

100

5.0

100

RGP

30J

600

420

600

RGP

30K

800

560

800

RGP

30M

1000

700

1000

units

V

A

V

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =55

°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

Current and 25

°C

Maximum full load reverse current full cycle

average at 55

°C

Ambient

Maximum DC Reverse Current

Ta =25

°C

at rated DC blocking voltage

Ta =125

°C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance

(Note 2)

Typical Thermal Resistance

(Note 3)

Storage and Operating Junction Temperature

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir(av)

Ir

Trr

Cj

R(ja)

Tstg, Tj

µ

A

µ

A

µ

A

250

500

nS

pF

150

60

20

-65 to +175

°C

/W

°C

Note:

1. Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A4

www.gulfsemi.com

RGP30G Related Products

	RGP30G	RGP30A	RGP30B	RGP30J	RGP30D	RGP30M	RGP30K
Description	3 A, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, SILICON, RECTIFIER DIODE	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	O-PALF-W2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	O-PALF-W2	PLASTIC PACKAGE-2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Humidity sensitivity level	1	1	1	1	1	1	1
Maximum non-repetitive peak forward current	125 A	125 A	125 A	125 A	125 A	125 A	125 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	400 V	50 V	100 V	600 V	200 V	1000 V	800 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.15 µs	0.15 µs	0.15 µs	0.025 µs	0.15 µs	0.5 µs	0.5 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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