RGPP3M datasheet, PDF - EEWORLD Datasheet

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RGPP3M: Description3 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size392KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/; Environmental Compliance

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RGPP3M Overview

3 A, SILICON, RECTIFIER DIODE

RGPP3M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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RGPP3A THRU RGPP3M

GLASS PASSIVATED

FAST RECOVERY RECTIFIER

VOLTAGE: 50 TO 1000V

CURRENT: 1.0A

FEATURE

Molded case feature for auto insertion

High Switching Capability

Low leakage current

High surge capability

High temperature soldering guaranteed

250° /10sec/0.375" lead length at 5 lbs tension

C

Glass Passivated chip

DO - 201AD

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

RGPP

3A

RGPP

3B

RGPP

3D

RGPP

3G

RGPP

3J

RGPP

3K

RGPP

3M

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8" lead length at Ta =55°

C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Instantaneous Forward Voltage at

rated forward current

Maximum full load reverse current

full cycle at T

L

=75°

C

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Ta =25°

C

T

L

=55°

C

(Note 1)

Vrrm

Vrms

Vdc

If(av)

Ifsm

Vf

Ir(av)

Ir

Cj

Trr

Tstg, Tj

50

35

50

100

70

100

200

140

200

400

280

400

3.0

125

1.3

30

5.0

100.0

50.0

600

420

600

800

560

800

1000

700

1000

V

A

V

µA

pF

Maximum Reverse Recovery Time (Note 2)

Storage and Operation Junction Temperature

150

-55 to +150

250

500

nS

°

C

Note:

1. Measured at 1.0 MHz and applied voltage of 4.0Vdc

2. Test Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

Rev.4

www.gulfsemi.com

RGPP3M Related Products

	RGPP3M	RGPP3G	RGPP3B	RGPP3D	RGPP3J	RGPP3K
Description	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE	3 A, SILICON, RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Humidity sensitivity level	1	1	1	1	1	1
Maximum non-repetitive peak forward current	125 A	125 A	125 A	125 A	125 A	125 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	400 V	100 V	200 V	600 V	800 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.5 µs	0.15 µs	0.15 µs	0.15 µs	0.25 µs	0.5 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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