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BC856C-TP

Description
100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size95KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric View All

BC856C-TP Overview

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC856C-TP Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionSOT-23, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor125
Rated crossover frequency150 MHz
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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BC856A
THRU
BC858C
PNP Small
Signal Transistor
310mW
SOT-23
A
D
Features
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Ideally Suited for Automatic Insertion
150 C Junction Temperature
For Switching and AF Amplifier Applications
o
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams ( approx.)
C
B
Type
BC856A
BC856B
BC857A
BC857B
Marking Code (Note 2)
Marking
Type
3A
BC857C
3B
BC858A
3E
BC858B
3F
BC858C
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
C B O
C
Marking
3G
3J
3K
3L
Value
-80
-50
-30
-65
-45
-30
-5.0
-100
-200
-200
310
Unit
V
B
F
E
E
G
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Base Voltage
DIM
A
B
C
D
E
F
G
H
J
K
Collector-Emitter Voltage
V
C E O
V
EBO
I
C
I
C M
I
EM
V
V
mA
mA
mA
mW
o
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation@T
s
=50 C(Note1)
Operating & Storage Temperature
o
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
P
d
T
j
, T
S T G
-55~150
C
Note:
1.
Package mounted on ceramic substrate 0.7mm X 2.5cm
2
area.
2.
Current gain subgroup “ C” is not available for BC856
.037
.950
.037
.950
www.mccsemi.com
Revision: 5
1 of 3
2008/01/01

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