BC857BV datasheet, PDF - EEWORLD Datasheet

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BC857BV: DescriptionPNP Plastic-Encapsulate Transistors; File Size101KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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BC857BV Overview

PNP Plastic-Encapsulate Transistors

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

BC857BV

Features

•

Epitaxial Die Construction

Complementary NPN Type Available (BC847BV)

Ultra-small Surface Mount Package

Lead Free Plating

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

Marking:K5V

PNP

Plastic-Encapsulate

Transistors

SOT-563

Unit

V

A

W

/W

Maximum Ratings @ 25

O

C Unless Otherwise Specified

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

R

©

JA

T

J

T

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Dissipation

Thermal Resistance Junction to Ambient

Operating Junction Temperature

Storage Temperature

Rating

-45

-50

-5

-0.1

0.15

833

-55 to +150

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

V

CE(sat)

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=-10mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=-10uAdc, I

E

=0)

Collector-Emitter Breakdown Voltage

(I

E

=-1uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=-30Vdc, I

E

=0Vdc)

DC Current Gain

(I

C

=-2mAdc, V

CE

=-5Vdc)

Collector-Emitter Saturation Voltage

(I

C

=-10mAdc, I

B

=-0.5mAdc)

(I

C

=-100mAdc, I

B

=-5mAdc)

Base-Emitter Saturation Voltage

(I

C

=-10mAdc, I

B

=-0.5mAdc)

(I

C

=-100mAdc, I

B

=-5mAdc)

Base-Emitter Voltage

(I

C

=-2mAdc, V

CE

=-5Vdc)

(I

C

=-10mAdc, V

CE

=-5Vdc)

Transition Frequency

(V

CE

=-5Vdc, I

C

=-10mAdc, f=100MHz)

Output Capacitance

(V

CB

=-10Vdc, f=1.0MHz, I

E

=0)

Noise Figure

(V

CE

=-5V,I

C

=-0.2mA, f=1KHz, R

S

=2k¡,

BW=200Hz)

Min

-45

-50

-6

---

200

---

-0.6

---

100

---

Typ

---

-0.7

-0.9

---

Max

---

-15

475

-0.1

-0.4

---

-0.75

-0.82

---

4.5

10

Units

Vdc

INCHES

DIMENSIONS

MM

MAX

.011

.049

.067

.020

.035

.059

.022

.004

.043

.067

.023

.011

.007

0.90

1.50

0.56

0.10

MIN

0.15

1.10

1.55

0.50

1.10

1.70

0.60

0.30

0.18

MAX

0.30

1.25

1.70

NOTE

nAdc

---

Vdc

V

BE(sat)

Vdc

DIM

A

B

C

D

G

H

K

L

M

MIN

.006

.043

.061

V

BE

f

T

C

ob

NF

Vdc

MHz

pF

dB

www.mccsemi.com

Revision: 3

1 of 3

2008/01/01

BC857BV Related Products

	BC857BV	BC857BV-TP
Description	PNP Plastic-Encapsulate Transistors	PNP Plastic-Encapsulate Transistors

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