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DTA123JCA-TP

Description
100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size124KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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DTA123JCA-TP Overview

100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR

DTA123JCA-TP Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.1000 A
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN RESISTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.2000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor80
Rated crossover frequency250 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
DTA123JCA
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available
Built-In Biasing Resistors
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Digital Transistors
Absolute maximum ratings @ 25
Symbol
V
CC
V
IN
P
d
T
j
T
stg
I
O
I
C(MAX)
Parameter
Supply voltage
Input voltage
Power dissipation
Junction temperature
Storage temperature
Output current
Min
---
-5
---
---
-55
Typ
50
---
200
150
---
100
100
Max
---
+12
---
---
150
Unit
V
V
mW
3
SOT-23
A
D
C
1
2
E
B
1:IN
2:GND
3:OUT
mA
F
Electrical Characteristics @ 25
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Input voltage (V
CC
=5V, I
O
=100 A)
(V
O
=0.3V, I
O
=5mA)
Output voltage (I
O
=5mA,I
i
=0.25mA)
Input current (V
I
=5V)
Output current (V
CC
=50V, V
I
=0)
DC current gain (V
O
=5V, I
O
=10mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=10V, I
E
=5mA, f=100MHz)
Min
---
1.1
---
---
---
80
1.54
17
---
Typ
---
---
0.1
---
---
---
2.2
21
250
Max
0.5
---
0.3
3.6
0.5
---
2.86
26
---
Unit
V
V
V
mA
A
K
MHz
G
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
*Marking: E32
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision: 3
1 of 3
2009/02/11

DTA123JCA-TP Related Products

DTA123JCA-TP DTA123JCA DTA123JCA_09
Description 100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 0.1000 A 0.1000 A 0.1000 A
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-free Yes Yes Yes
EU RoHS regulations Yes Yes Yes
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN
Terminal location DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 0.2000 W 0.2000 W 0.2000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 80 80 80
Rated crossover frequency 250 MHz 250 MHz 250 MHz
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