SB120E datasheet, PDF - EEWORLD Datasheet

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SB120E: Description1 A, 20 V, SILICON, SIGNAL DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size91KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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SB120E Overview

1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

SB120E Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW POWER LOSS
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	20 V
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL

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SB120E THRU SB160E

SCHOTTKY BARRIER

RECTIFIER

VOLTAGE: 20 TO 60V

CURRENT: 1.0A

FEATURE

High current capability, Low forward voltage drop

Low power loss, high efficiency

High surge capability

High temperature soldering guaranteed

250° /10sec/0.375" lead length at 5 lbs tension

A-405

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current 3/8" lead length

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at 1.0A DC

Vrrm

Vrms

Vdc

If(av)

Ifsm

0.5

120E

130E

140E

1.0

40.0

0.7

150E

160E

units

°C /W

1.0

Maximum DC Reverse Current

Ta =25°C

at rated DC blocking voltage

Ta =100°

10.0

Typical Junction Capacitance

(Note 1)

110.0

Typical Thermal Resistance

(Note 2)

R(ja)

50.0

Storage and Operating Junction Temperature

-65 to +125

-65 to +150

Storage Temperature

Tstg

-65 to +150

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.5" lead length, vertical P.C. Board Mounted

Rev.A5

www.gulfsemi.com

SB120E Related Products

	SB120E	SB140E
Description	1 A, 20 V, SILICON, SIGNAL DIODE, DO-41	1 A, 40 V, SILICON, SIGNAL DIODE, DO-41
Maker	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	LOW POWER LOSS	LOW POWER LOSS
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-PALF-W2	O-PALF-W2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-65 °C	-65 °C
Maximum output current	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	20 V	40 V
surface mount	NO	NO
technology	SCHOTTKY	SCHOTTKY
Terminal form	WIRE	WIRE
Terminal location	AXIAL	AXIAL

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