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BDX54/A/B/C
BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX53, BDX53A, BDX53B and BDX53C respectively
1
TO-220
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BDX54
: BDX54A
: BDX54B
: BDX54C
1.Base
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-8
- 12
- 0.2
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX54
: BDX54A
: BDX54B
: BDX54C
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
-2
750
-2
- 2.5
- 1.8
- 2.5
- 2.5
V
V
V
V
Typ.
Max.
Units
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 3A
I
C
= - 3A, I
B
= - 12mA
I
C
= - 3A, I
B
= - 12mA
I
F
= - 3A
I
F
= - 8A
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX54/A/B/C
Typical Characteristics
100000
-3.6
V
BE
(sat)[V], SATURATION VOLTAGE
V
CE
= -3V
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
I
C
= 250I
B
h
FE
, DC CURRENT GAIN
10000
1000
100
-0
-1
-10
-1.0
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
-3.2
-3.0
V
CE
(sat)[V], SATURATION VOLTAGE
-3.0
-2.8
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0
-1
I
C
= 250I
B
-2.8
V
F
(sat)[V], FORWARD VOLTAGE
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-10
-0.4
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
F
[A], FORWARD CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Damper Diode Forward Voltage
-100
80
70
I
C
[A], COLLECTOR CURRENT
P
D
[W], POWER DISSIPATION
I
C
Max. (Pulsed)
60
us
10
-10
I
C
Max. (Continuous)
50
s
1m
100us
40
C
D
30
-1
20
BDX54
BDX54A
BDX54B
BDX54C
-0.1
-1
-10
-100
-1000
10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX54/A/B/C
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E