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BF240_NL

Description
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size24KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BF240_NL Overview

Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BF240_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92
package instructionLEAD FREE, TO-92, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
BF240
BF240
NPN RF Transistor
1
TO-92
1. Collector 2. Emitter 3. Base
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
40
40
4.0
50
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
re
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 20V, I
E
= 0
I
C
= 1mA, V
CE
= 10V
I
C
= 1mA, I
B
= 0.1mA
I
C
= 1mA, I
B
= 0.1mA
I
C
= 7.0mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
65
Min.
40
40
4.0
100
225
0.65
0.74
1100
0.34
V
V
MHz
pF
Max.
Units
V
V
V
nA
Collector-Emitter Breakdown Voltage *
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current gain Bandwidth Product
Common-Emitter Ruerse
Transfer Capacitance
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003

BF240_NL Related Products

BF240_NL BF240_ND74Z BF240_D74Z
Description Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker Fairchild Fairchild Fairchild
Parts packaging code TO-92 TO-92 TO-92
package instruction LEAD FREE, TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) - 0.05 A 0.05 A
Collector-emitter maximum voltage - 40 V 40 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 65 65
JEDEC-95 code - TO-92 TO-92
JESD-30 code - O-PBCY-T3 O-PBCY-T3
JESD-609 code - e3 e3
Number of components - 1 1
Number of terminals - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT APPLICABLE NOT APPLICABLE
Polarity/channel type - NPN NPN
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT APPLICABLE NOT APPLICABLE
Transistor component materials - SILICON SILICON

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