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BF494_D27Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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BF494_D27Z Overview

Transistor

BF494_D27Z Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.03 A
ConfigurationSingle
Minimum DC current gain (hFE)67
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
BF494 NPN RF Transistor
July 2006
BF494
NPN RF Transistor
tm
TO-92
1. Collector 2. Emitter 3. Base
T
a
= 25°C unless otherwise noted
Absolute Maximum Ratings *
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
Parameter
Value
20
30
5.0
30
150
- 55 ~ 150
Unit
V
V
V
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation, by R
θJA
Derate above 25°C
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Value
350
2.8
125
357
Unit
mW
mW/°C
°C/W
°C/W
Electrical Characteristics*
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(ON)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base BreakdownVoltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Conditions
I
C
= 1.0mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 40V, V
EB
= 0V
V
CE
= 10V, I
C
= 1mA
I
C
= 10mA, I
B
= 5mA
I
C
= 10mA, I
B
= 5mA
V
CE
= 10V, I
C
= 10mA
Min.
20
30
5.0
Max.
Units
V
V
V
10
67
222
0.2
0.92
650
740
nA
V
V
mV
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BF494 Rev. A

BF494_D27Z Related Products

BF494_D27Z BF494_D74Z
Description Transistor Transistor
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Reach Compliance Code compliant compliant
Maximum collector current (IC) 0.03 A 0.03 A
Configuration Single Single
Minimum DC current gain (hFE) 67 67
JESD-609 code e3 e3
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)

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