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BSR58_NL

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, LEAD FREE, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BSR58_NL Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, LEAD FREE, SOT-23, 3 PIN

BSR58_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain-source on-resistance60 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSR58
BSR58
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
sourced from process 51
2
3
SOT-23
Mark: M6
1. Drain 2. Source 3. Gate
1
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
DGO
V
GSO
I
GF
P
tot
T
STG
T
J
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Power Dissipation up to T
amb
=40°C
Storage Temperature Range
Junction Temperature
Parameter
Value
40
- 40
50
250
- 55 ~ 150
150
Units
V
V
mA
mW
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
GSS
I
GSS
I
DSS
V
GS
(off)
V
DS
(on)
r
ds
(on)
C
rss
t
d
t
r
t
off
Parameter
Gate-Source Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Gate-Source Cut-off Voltage
Drain-Source On Voltage
Drain-Source On Reverse
Reverse Transfer Capacitance
Delay Time
Rise Time
Turn-off Time
Test Condition
V
DS
= 0V, I
C
= 1µA
V
GS
= 20V
V
DS
= 15V, V
GS
= 0V
V
DS
= 15V, I
D
= 0.5nA
V
GS
= 0V, I
D
= 5mA
V
GS
= 0V, I
D
= 0
V
DS
= 0V, V
GS
= 10V
V
DD
= 10V, V
GS
(on) = 0V
I
D
= 10mA, V
GS
(off) = 10V
8
0.8
Min.
40
Typ.
Max.
1
80
4
0.4
60
5
10
10
100
Units
V
nA
mA
V
V
pF
nS
nS
nS
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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