BSS138NL6327 datasheet, PDF - EEWORLD Datasheet

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BSS138NL6327: DescriptionSmall Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size462KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS138NL6327 Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

BSS138NL6327 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.23 A
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.8 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

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BSS138N

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen free according to IEC61249-2-21

Product Summary

DS(on),max

3.5

0.23

PG-SOT-23

Type

BSS138N

Parameter

Package

PG-SOT-23

Tape and Reel

L6327: 3000

L6433: 10000

Marking

SKs

Value

0.23

0.18

0.92

Unit

Symbol Conditions

=25 °C

=70 °C

Continuous drain current

Pulsed drain current

D,pulse

=25 °C

=0.23 A,

=48 V,

di /dt =200 A/µs,

j,max

=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

Gate source voltage

ESD sensitivity

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

MIL-STD 883 (HBM)

JESD22-A114 (HBM)

tot

stg

=25 °C

±20

Class 1 (<1999V)

Class 0 (<250V)

0.36

-55 ... 150

55/150/56

°C

Rev. 2.85

page 1

2012-04-04

BSS138NL6327 Related Products

	BSS138NL6327	BSS138NL6433	BSS138NL6433XT
Description	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Maker	Infineon	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	0.23 A	0.23 A	0.23 A
Maximum drain-source on-resistance	3.5 Ω	3.5 Ω	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.8 pF	3.8 pF	3.8 pF
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	conform to	-
Maximum drain current (Abs) (ID)	0.23 A	0.23 A	-
Humidity sensitivity level	1	1	-
Maximum operating temperature	150 °C	150 °C	-
Maximum power dissipation(Abs)	0.36 W	0.36 W	-

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