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BSV52D87Z

Description
200mA, 12V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size170KB,6 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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BSV52D87Z Overview

200mA, 12V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BSV52D87Z Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns

BSV52D87Z Related Products

BSV52D87Z BSV52L99Z BSV52S62Z
Description 200mA, 12V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200mA, 12V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200mA, 12V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Maker Texas Instruments Texas Instruments Texas Instruments
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 400 MHz 400 MHz 400 MHz
Maximum off time (toff) 18 ns 18 ns 18 ns
Maximum opening time (tons) 12 ns 12 ns 12 ns

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