ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC546
65
80
BC547
45
50
6.0
100
625
5.0
1.5
12
–55 to +150
BC548
30
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
BC546
BC546B
BC547A
BC547B
BC547C
BC548B
BC548C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc)
Emitter–Base Breakdown Voltage
(I
E
= 10
mA,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 70 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0)
(V
CE
= 35 V, V
BE
= 0)
(V
CE
= 30 V, T
A
= 125°C)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546/547/548
V
(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
—
—
—
—
—
—
—
—
—
—
15
15
15
4.0
V
V
(BR)CBO
V
V
(BR)EBO
V
I
CES
nA
µA
©
Semiconductor Components Industries, LLC, 2001
242
May, 2001 – Rev. 3
Publication Order Number:
BC546/D
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
h
FE
BC547A
BC546B/547B/548B
BC548C
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
BC547A/548A
BC546B/547B/548B
BC548C
V
CE(sat)
—
—
—
V
BE(sat)
V
BE(on)
0.55
—
—
—
0.7
0.77
—
0.09
0.2
0.3
0.7
0.25
0.6
0.6
—
V
V
—
—
—
110
110
110
110
200
420
—
—
—
90
150
270
—
—
—
180
290
520
120
180
300
—
—
—
450
800
800
220
450
800
—
—
—
V
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
(I
C
= 10 mA, I
B
= See Note 1)
Base–Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
Base–Emitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
BC546
BC547
BC548
C
obo
C
ibo
h
fe
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
NF
BC546
BC547
BC548
—
—
—
2.0
2.0
2.0
10
10
10
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
dB
150
150
150
—
—
300
300
300
1.7
10
—
—
—
4.5
—
pF
pF
—
MHz
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 kW,
f = 1.0 kHz,
∆f
= 200 Hz)
Note 1: I
B
is value for which I
C
= 11 mA at V
CE
= 1.0 V.
Figure 14.
http://onsemi.com
243
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
BC547/BC548
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 1. Normalized DC Current Gain
2.0
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
0.8
0.4
0
I
C
=
I
C
=
10 mA 20 mA
I
C
= 50 mA
I
C
= 100 mA
1.0
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.02
1.0
0.1
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
10
7.0
C, CAPACITANCE (pF)
5.0
3.0
C
ob
2.0
C
ib
T
A
= 25°C
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
400
300
200
Figure 4. Base–Emitter Temperature Coefficient
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
http://onsemi.com
244
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
BC546
1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 5 V
T
A
= 25°C
2.0
1.0
0.5
0.2
0.1 0.2
10
100
1.0
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
A
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.5
1.0
10 20
2.0
5.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
V
BE
@ V
CE
= 5.0 V
Figure 7. DC Current Gain
2.0
T
A
= 25°C
1.6
20 mA
1.2
0.8
0.4
0
I
C
=
10 mA
50 mA
100 mA
200 mA
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VB
for V
BE
-55°C to 125°C
0.02
0.05
0.1
0.2
0.5
1.0 2.0
I
B
, BASE CURRENT (mA)
5.0
10
20
0.2
0.5
10 20
5.0
1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
50
100
200
Figure 9. Collector Saturation Region
40
T
A
= 25°C
C, CAPACITANCE (pF)
20
C
ib
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
500
200
100
50
20
V
CE
= 5 V
T
A
= 25°C
10
6.0
4.0
C
ob
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0 10
50 100
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
http://onsemi.com
245
京公网安备 11010802033920号
EEWORLD
