AP1J3P-AZ datasheet, PDF - EEWORLD Datasheet

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AP1J3P-AZ: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size104KB，6 Pages; ManufacturerNEC Electronics

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AP1J3P-AZ Overview

Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN

AP1J3P-AZ Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 3.03
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	135
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

COMPOUND TRANSISTOR

AP1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

PACKAGE DRAWING (UNIT: mm)

FEATURES

• Current drive available up to 0.7 A

• On-chip bias resistor

• Low power consumption during drive

AP1 SERIES LISTS

Products

AP1A4A

AP1L2Q

AP1A3M

AP1F3P

AP1J3P

AP1L3N

AP1A4M

(KΩ)

−

0.47

1.0

2.2

3.3

4.7

(KΩ)

4.7

1.0

Electrode Connection

1. Emitter

EIAJ : SC-43B

2. Collector JEDEC: TO-92

3. Base

IEC

: PA33

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

C(DC)

C(pulse)

B(DC)

stg

Ratings

−25

−10

−0.7

−1.0

−0.02

750

150

−55

to +150

Unit

°C

* PW

≤

10 ms, duty cycle

≤

50 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16171EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

AP1J3P-AZ Related Products

	AP1J3P-AZ	AP1A4M-AZ	AP1F3P-AZ	AP1A3M-AZ	AP1L3N-AZ	AP1A4A-AZ	AP1L2Q-AZ
Description	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 3.03	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.54	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 2.12	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	135	50	50	50	50	50	50
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	NEC Electronics	-	-	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics

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