NCV8570
200 mA, Ultra Low Noise,
High PSRR, BiCMOS RF LDO
Regulator
Noise sensitive RF applications such as Power Amplifiers in satellite
radios, infotainment equipment, and precision instrumentation for
automotive applications require very clean power supplies.
The NCV8570 is 200 mA LDO that provides the engineer with a
very stable, accurate voltage with ultra low noise and very high Power
Supply Rejection Ratio (PSRR) suitable for RF applications. In order
to optimize performance for battery operated portable applications,
the NCV8570 employs an advanced BiCMOS process to combine the
benefits of low noise and superior dynamic performance of bipolar
elements with very low ground current consumption at full loads
offered by CMOS.
Furthermore, in order to provide a small footprint for
space−conscious applications, the NCV8570 is stable with small, low
value capacitors and is available in very small DFN6 2x2.2 and
TSOP−5 packages.
Features
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DFN6
MN SUFFIX
CASE 506BA
TSOP−5
SN SUFFIX
CASE 483
PIN ASSIGNMENTS
CE
GND
V
in
1
2
3
6
5
4
C
noise
GND
V
out
Output Voltage Options:
DFN6
(Top View)
1
V
in
GND
CE
TSOP−5
(Top View)
C
noise
5
V
out
Typical Applications
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
5
XXXAYWG
G
1
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Satellite and HD Radio
Noise Sensitive Applications (Video, Audio)
Analog Power Supplies
Portable/Built−in DVD Entertainment Systems
GPS
V
in
C
in
V
out
NCV8570
CE
C
noise
GND
V
out
C
noise
C
out
V
in
ORDERING INFORMATION
Figure 1. Typical Application Schematic
Semiconductor Components Industries, LLC, 2013
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
June, 2013
−
Rev. 4
1
ÉÉ
1.8 V, 2.5 V, 2.75 V, 2.8 V, 3.0 V, 3.3 V
Contact Factory for Other Voltage Options
Output Current Limit 200 mA
Ultra Low Noise (typ 15
mV
rms
)
Very High PSRR (typ 80 dB)
Stable with Ceramic Output Capacitors as low as 1
mF
Low Sleep Mode Current (max 1
mA)
Active Discharge Circuit
Current Limit Protection
Thermal Shutdown Protection
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
MARKING DIAGRAMS
XXMG
G
Publication Order Number:
NCV8570/D
NCV8570
V
in
Bandgap
Reference
Voltage
C
noise
CE
V
out
Current
Limit
Figure 2. Simplified Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
DFN6
1
TSOP−5
3
Pin Name
CE
Description
Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect
to GND. If this function is not in use, connect to V
in
. Internal 5 MW Pull Down resistor is
connected between CE and GND.
Power Supply Ground (Pins are fused for the DFN package)
Power Supply Input Voltage
Regulated Output Voltage
Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND)
2, 5, EPAD
3
4
6
2
1
5
4
GND
V
in
V
out
C
noise
MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Chip Enable Voltage
Noise Reduction Voltage
Output Voltage
Maximum Junction Temperature (Note 1)
Storage Temperature Range
Symbol
V
in
V
CE
V
Cnoise
V
out
T
J(max)
T
STG
Value
−0.3
V to 6 V
−0.3
V to V
in
+0.3 V
−0.3
V to V
in
+0.3 V
−0.3
V to V
in
+0.3 V
150
−55
to 150
Unit
V
V
V
V
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device series meets or exceeds AEC Q100 standard.
THERMAL CHARACTERISTICS
Rating
Package Thermal Resistance, DFN6: (Note 1)
Junction−to−Lead (pin 2)
Junction−to−Ambient
Package Thermal Resistance, TSOP−5: (Note 1)
Junction−to−Lead (pin 5)
Junction−to−Ambient
Symbol
R
qJA
Value
37
120
109
220
Unit
C/W
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area
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2
+
−
Active
Discharge
GND
R
qJA
C/W
NCV8570
ELECTRICAL CHARACTERISTICS
(V
in
= V
out
+ 0.5 V, V
CE
= 1.2 V, C
in
= 0.1
mF,
C
out
= 1
mF,
C
noise
= 10 nF, T
A
=
−40C
to 85C, unless otherwise specified (Note 2))
Characteristic
REGULATOR OUTPUT
Input Voltage
Output Voltage (Note 3)
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
V
in
= (V
out
+0.5 V) to 5.5 V
I
out
= 1 mA
V
in
V
out
2.5
1.764
2.450
2.695
2.744
2.940
3.234
(−2%)
1.746
2.425
2.6675
2.716
2.910
3.201
(−3%)
−
−
−
−0.2
−
−
−
200
210
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.2
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5.5
1.836
2.550
2.805
2.856
3.060
3.366
(+2%)
1.854
2.575
2.8325
2.884
3.090
3.399
(+3%)
−
−
−
0.2
25
−
−
470
490
155
155
155
150
150
215
205
205
200
200
90
220
1
−
−
0.4
−
10
−
−
−
−
V
V
Test Conditions
Symbol
Min
Typ
Max
Unit
Output Voltage (Note 3)
V
in
= (V
out
+0.5 V) to 5.5 V
I
out
= 1 mA to 200 mA
V
out
V
Power Supply Ripple Rejection
V
in
= V
out
+1.0 V + 0.5 V
p−p
I
out
= 1 mA to 150 mA
f = 120 Hz
C
noise
= 100nF
f = 1 kHz
f = 10 kHz
V
in
= (V
out
+0.5 V) to 5.5 V, I
out
= 1 mA
I
out
= 1 mA to 200 mA
f = 10 Hz to 100 kHz
I
out
= 1 mA to 150 mA C
noise
= 100 nF
C
noise
= 10 nF
V
out
= V
out(nom)
– 0.1 V
V
out
= 0 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
I
out
= 150 mA
PSRR
80
80
65
−
12
15
20
310
320
105
105
105
100
100
170
150
150
140
130
70
110
0.1
150
20
−
−
5
0.4
4
800
200
dB
Line Regulation
Load Regulation
Output Noise Voltage
Reg
line
Reg
load
V
n
%/V
mV
mV
rms
Output Current Limit
Output Short Circuit Current
Dropout Voltage (Note 4, 5)
I
LIM
I
SC
V
DO
mA
mA
mV
Dropout Voltage (Note 6)
I
out
= 200 mA
V
DO
mV
GENERAL
Ground Current
Disable Current
Thermal Shutdown Threshold (Note 4)
Thermal Shutdown Hysteresis (Note 4)
CHIP ENABLE
Input Threshold
Low
High
V
th(CE)
R
PD(CE)
I
out
= 150 mA
C
noise
= 10 nF/100 nF
C
noise
= 10 nF
C
noise
= 100 nF
I
out
= 1 mA
I
out
= 10 mA
t
on
t
off
V
MW
ms
ms
I
out
= 1 mA
I
out
= 200 mA
V
CE
= 0 V
I
GND
I
DIS
T
SD
T
SH
mA
mA
C
C
Internal Pull−Down Resistance (Note 7)
TIMING
Turn−on Time
Turn−off Time
2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
T
J
= T
A
= 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. Contact factory for other voltage options.
4. Guaranteed by design and characterization.
5. Characterized when output voltage falls 100 mV below the regulated voltage at V
in
= V
out
+ 1 V if V
out
< 2.5 V, then V
DO
= V
in
−
V
out
at V
in
= 2.5 V.
6. Measured when output voltage falls 100 mV below the regulated voltage at V
in
= V
out
+ 0.5 V if V
out
< 2.5 V, then V
DO
= V
in
−
V
out
at V
in
= 2.5 V.
7. Expected to disable device when CE pin is floating.
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NCV8570
TYPICAL CHARACTERISTICS
1.820
V
out
, OUTPUT VOLTAGE (V)
V
out
, OUTPUT VOLTAGE (V)
1.815
1.810
I
out
= 1 mA
I
out
= 150 mA
V
out
= 1.8 V
2.520
2.515
2.510
2.505
2.500
2.495
2.490
2.485
2.480
−40
−20
0
20
40
60
80
100
I
out
= 150 mA
I
out
= 1 mA
V
out
= 2.5 V
1.805
1.800
1.795
1.790
1.785
−20
0
20
40
60
1.780
−40
80
100
T
A
, AMBIENT TEMPERATURE (C)
T
A
, AMBIENT TEMPERATURE (C)
Figure 3. Output Voltage vs. Temperature
(V
out
= 1.8 V)
2.760
V
out
, OUTPUT VOLTAGE (V)
V
out
, OUTPUT VOLTAGE (V)
2.755
2.750
2.745
2.740
2.735
2.730
2.725
2.720
−40
−20
0
20
40
60
80
I
out
= 1 mA
I
out
= 150 mA
V
out
= 2.75 V
2.820
2.815
2.810
2.805
2.800
2.795
2.790
2.785
2.780
−40
Figure 4. Output Voltage vs. Temperature
(V
out
= 2.5 V)
V
out
= 2.8 V
I
out
= 1 mA
I
out
= 150 mA
100
−20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (C)
T
A
, AMBIENT TEMPERATURE (C)
Figure 5. Output Voltage vs. Temperature
(V
out
= 2.75 V)
3.020
V
out
, OUTPUT VOLTAGE (V)
V
out
, OUTPUT VOLTAGE (V)
3.015
3.010
3.005
I
out
= 1 mA
I
out
= 150 mA
V
out
= 3.0 V
3.320
3.315
3.310
3.305
3.300
3.295
3.290
3.285
3.280
−40
Figure 6. Output Voltage vs. Temperature
(V
out
= 2.8 V)
V
out
= 3.3 V
3.000
2.995
2.990
2.985
2.980
−40
−20
0
20
40
60
I
out
= 1 mA
I
out
= 150 mA
80
100
−20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (C)
T
A
, AMBIENT TEMPERATURE (C)
Figure 7. Output Voltage vs. Temperature
(V
out
= 3.0 V)
Figure 8. Output Voltage vs. Temperature
(V
out
= 3.3 V)
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NCV8570
TYPICAL CHARACTERISTICS
4.0
V
out
, OUTPUT VOLTAGE (V)
3.3 V
3.0 V
2.8 V
2.5 V
1.8 V
I
GND
, GROUND CURRENT (mA)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
1.0
2.0
3.0
4.0
T
A
= 25C
I
out
= 1 mA
5.0
6.0
140
130
120
110
100
90
80
70
60
50
40
−40
−20
0
20
40
60
80
100
I
out
= 1 mA
I
out
= 150 mA
V
in
, INPUT VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (C)
Figure 9. Output Voltage vs. Input Voltage
200
V
DO
, DROPOUT VOLTAGE (mV)
I
GND
, GROUND CURRENT (mA)
180
160
140
120
100
80
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
out
= 1.8 V
I
out
= 1 mA
V
out
= 2.5 V
T
A
= 25C
V
out
= 2.8 V
V
out
= 3.3 V
V
out
= 3.0 V
I
out
= 150 mA
135
130
125
120
115
110
105
100
95
90
85
0
Figure 10. Ground Current vs. Temperature
V
out
= 2.5 V
T
A
= 85C
T
A
= 25C
T
A
=
−40C
25
50
75
100
125
150
V
in
, INPUT VOLTAGE (V)
I
out
, OUTPUT CURRENT (mA)
Figure 11. Ground Current vs. Input Voltage
Figure 12. Dropout Voltage vs. Output Current
125
V
DO
, DROPOUT VOLTAGE (mV)
115
110
105
100
95
90
85
80
75
T
A
=
−40C
T
A
= 25C
V
DO
, DROPOUT VOLTAGE (mV)
120
V
out
= 2.8 V
T
A
= 85C
125
120
115
110
105
100
95
90
85
80
75
T
A
=
−40C
T
A
= 25C
V
out
= 3.0 V
T
A
= 85C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
I
out
, OUTPUT CURRENT (mA)
I
out
, OUTPUT CURRENT (mA)
Figure 13. Dropout Voltage vs. Output Current
Figure 14. Dropout Voltage vs. Output Current
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