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NDP02N60ZG

Description
2.2 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size146KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NDP02N60ZG Overview

2.2 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET

NDP02N60ZG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionHALOGEN FREE AND ROHS COMPLIANT, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging codeCASE 221A-09
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)120 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance4.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8
W
Features
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V
DSS
600 V
R
DS(on)
(MAX) @ 1 A
4.8
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
(Note 1)
Continuous Drain Current R
qJC
T
A
= 100°C (Note 1)
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
D
= 2.4 A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
30%,
T
A
= 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body
Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
2.4
1.6
10
24
±30
120
2500
4500
NDF
600
2.2
1.4
9
57
NDD
Unit
V
A
A
A
W
V
mJ
V
V
S (3)
N−Channel
D (2)
G (1)
dv/dt
I
S
T
L
T
J
, T
stg
4.5
2.4
260
−55
to 150
V/ns
A
°C
°C
1
3
NDF02N60ZG,
NDF02N60ZH
TO−220FP
CASE 221AH
4
4
1
1 2
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
SD
= 2.4 A, di/dt
100 A/ms, V
DD
BV
DSS
, T
J
= +150°C
3
NDD02N60Z−1G
IPAK
CASE 369D
2
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
January, 2014
Rev. 8
1
Publication Order Number:
NDF02N60Z/D

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Description 2.2 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
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