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NDP04N50Z

Description
3 A, 500 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size120KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NDP04N50Z Overview

3 A, 500 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET

NDP04N50Z Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage500 V
Processing package descriptionROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current3 A
Rated avalanche energy120 mJ
Maximum drain on-resistance0.0027 ohm
Maximum leakage current pulse12 A
NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7
W
Features
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
DSS
500 V
R
DS(on)
(MAX) @ 1.5 A
2.7
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
Continuous Drain Current
R
qJC
, T
A
= 100°C
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
D
= 3.4 A
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
dv/dt
I
S
T
L
T
J
, T
stg
Value
500
3.0
1.9
12
61
±30
120
2800
4.5 (Note 1)
3.4
260
−55
to 150
Unit
V
A
A
A
W
V
mJ
V
V/ns
A
°C
°C
1
2
1 2
3
3
4
4
S (3)
G (1)
N−Channel
D (2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
D
v
3.4 A, di/dt
200 A/ms, V
DD
BV
DSS
, T
J
150°C.
IPAK
CASE 369D
STYLE 2
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
September, 2011
Rev. 1
1
Publication Order Number:
NDD04N50Z/D

NDP04N50Z Related Products

NDP04N50Z NDD04N50Z NDP04N50ZG
Description 3 A, 500 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET 3 A, 500 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET 3 A, 500 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 2 2 3
surface mount Yes Yes NO
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Minimum breakdown voltage 500 V 500 V -
Processing package description ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3 ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3 -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
packaging shape RECTANGULAR RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE -
terminal coating MATTE TIN MATTE TIN -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Channel type N-CHANNEL N-CHANNEL -
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
operating mode ENHANCEMENT ENHANCEMENT -
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER -
Maximum leakage current 3 A 3 A -
Rated avalanche energy 120 mJ 120 mJ -
Maximum drain on-resistance 0.0027 ohm 0.0027 ohm -
Maximum leakage current pulse 12 A 12 A -
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