Oscillator input. A CMOS inverting gate input. The input has a V
CC
/2 input threshold
and can be driven from an external CMOS or TTL logic gate.
Power supply for charge pump. Must be
≥
V
CC
.
Power supply voltage input. Input may range from 2.7V to 5.5V. Bypass capacitors
should be placed as close as possible to this pin and be connected directly to the
ground plane.
Internal charge pump output. For connection to a loop filter for driving the voltage
control input of an external oscillator.
Ground.
RF prescaler complimentary input. In single-ended mode, a bypass capacitor should
be placed as close as possible to this pin and be connected directly to the ground
plane. The LMX2323 can be driven differentially when a bypass capacitor is omitted.
RF prescaler input. Small signal input from the voltage controlled oscillator.
High impedance CMOS Clock input. Data is clocked in on the rising edge, into the
various counters and registers.
Binary serial data input. Data entered MSB first. LSB is control bit. High impedance
CMOS input.
Load Enable input. When Load Enable transitions HIGH, data is loaded into either the
N or R register (control bit dependent). See timing diagram.
PLL Enable. A LOW on CE powers down the device asynchronously and
TRI-STATE
®
s the charge pump output.
Lock detect output. This pin can be programmed to provide R counter output, N
counter output, digital lock detect (CMOS logic) or analog lock detect (open drain).
No Connect.
5
6
7
CP
o
GND
f
INB
O
—
I
8
9
10
11
12
14
2, 13,
15, 16
f
IN
Clock
Data
LE
CE
LD
NC
I
I
I
I
I
O
www.national.com
2
LMX2323
Absolute Maximum Ratings
(Note 1)
Power Supply Voltage (V
CC
)
−0.3V to 6.5V
V
CC
to 6.5V
Power Supply for Charge Pump (V
P
)
Voltage on Any Pin with
−0.3V to V
CC
+ 0.5V
GND = 0V (V
I
)
−65˚C to +150˚C
Storage Temperature Range (T
S
)
+260˚C
Lead Temperature (solder, 4 sec.) (T
L
)
ESD - Whole Body Model (Note 2)
2 kV
Recommended Operating
Conditions
(Note 1)
Power Supply Voltage (V
CC
)
Power Supply for Charge pump (V
P
)
Operating Temperature (T
A
)
2.7V to 5.5V
V
CC
to 5.5V
−40˚C to +85˚C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Conditions indicate conditions for which the
device is intended to be functional. For guaranteed specifications and test
conditions, see the Electrical Characteristics.
Note 2:
This device is a high performance RF integrated circuit and is ESD
sensitive. Handling and assembly of this device should be done on ESD pro-
tected workstations.
Electrical Characteristics
V
CC
= 3.3V, V
P
= 3.3V; −40˚C
<
T
A
<
85˚C except as specified.
Symbol
GENERAL
I
CC
I
CC
I
CC
-PWDN
f
IN
f
OSC
fφ
Pf
IN
Z
IN
V
OSC
RF Operating Frequency
Oscillator Frequency
Phase Detector Frequency
RF Input Sensitivity
RF Input Impedance
Oscillator Sensitivity
Phase Noise (Note 5)
f
IN
= 900 MHz, V
OSC
≥
0.8 V
PP
f
IN
= 900 MHz, V
OSC
≥
0.4 V
PP
f
IN
= 1800 MHz, V
OSC
≥
0.8 V
PP
f
IN
= 1800 MHz, V
OSC
≥
0.4 V
PP
CHARGE PUMP
I
CPo-source
I
CPo-sink
I
CPo-Tri
I
CPo
vs
V
CPo
I
CPo-sink
vs
I
CPo-source
I
CPo
vs T
Charge Pump TRI-STATE
Current
Charge Pump Output Current
Magnitude Variation vs Voltage
Charge Pump Output Current
Sink vs Source Mismatch
Charge Pump Output Current
Magnitude Variation vs
Temperature
High-Level Output Voltage
Low-Level Output Voltage
High-Level Input Voltage
(Note 6)
Low-Level Input Voltage (Note 6)
High-Level Input Current (Clock,
Data, Load Enable)
Low-Level Input Current (Clock,
Data, Load Enable)
Oscillator Input Current
V
IH
= V
CC
= 5.5V
V
IL
= 0, V
CC
= 5.5V
V
IH
= V
CC
= 5.5V
3
Parameter
Power Supply Current
Conditions
V
CC
= 3.3V
V
CC
= 2.7V to 5.5V
V
CC
= 5.5V (Note 3)
Min
Typ
3.5
Max
Units
mA
7.0
10
0.1
5
20
2.0
40
10
0
0
360
150
0.8
−86
−82
−82
−80
−4.0
4.0
−2.5
0.1
10
5
2.5
(Note 7)
1.2
mA
µA
GHz
MHz
MHz
dBm
dBm
Ω
Ω
V
PP
Vcc=3.0V
Vcc=5.0V
f = 900 MHz (Note 4)
f = 1900 MHz (Note 4)
-15
-10
130
100
0.4
dBc/Hz
Charge Pump Output Current
V
CPo
= V
P
/2
V
CPo
= V
P
/2
0.5
≤
V
CPo
≤
V
P
- 0.5
0.5
≤
V
CPo
≤
V
P
- 0.5
T
A
= 25˚C
V
CPo
= V
P
/2
T
A
= 25˚C
V
CPo
= V
P
/2
mA
mA
nA
%
%
8
%
DIGITAL INTERFACE (DATA, CLK,LE, CE)
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
IH
I
OH
= −500 µA
I
OL
= −500 µA
0.8Vcc
0.2Vcc
−1.0
−1.0
1.0
1.0
100
V
CC
−0.4
0.4
V
V
V
V
µA
µA
µA
www.national.com
LMX2323
Electrical Characteristics
Symbol
I
IL
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
EW
Parameter
Oscillator Input Current
Data to Clock Set Up Time
Data to Clock Hold Time
Clock Pulse Width High
Clock Pulse Width Low
Clock to Enable Set Up Time
Enable Pulse Width
(Continued)
V
CC
= 3.3V, V
P
= 3.3V; −40˚C
<
T
A
<
85˚C except as specified.
Conditions
V
IL
= 0, V
CC
= 5.5V
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
Min
−100
50
10
50
50
50
50
Typ
Max
Units
µA
ns
ns
ns
ns
ns
ns
DIGITAL INTERFACE (DATA, CLK,LE, CE)
MICROWIRE TIMING
Note 3:
This I
CC
-PWDN represents CLK, DATA, LE and CE being tied to either higher than 0.8 V
CC
or lower than 0.2 V
CC
.
Note 4:
Balanced input, |Z| = |R - jXc|, T
A
= 25˚C.
Note 5:
Phase noise is measured 1 kHz off from the carrier frequency. Comparison frequency is 200 kHz. OSC
IN
frequency is 13 MHz.
Note 6:
Except f
IN
and OSC
IN
.
Note 7:
Typical values are determined from measurements on the reference evaluation boards. A 3 dB (3 sigma) degradation is estimated from statistical distribution
in manufacturing. Units will NOT be tested in production.
Charge Pump Current Specification Definitions
DS101362-4
I1 = CP sink current at VCP
o
= V
P
−
∆V
I2 = CP sink current at VCP
o
= V
P
/2
I3 = CP sink current at VCP
o
=
∆V
I4 = CP source current at VCP
o
= V
P
−
∆V
I5 = CP source current at VCP
o
= V
P
/2
I6 = CP source current at VCP
o
=
∆V
∆V
= Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
CC
and ground. Typical values are between 0.5V and 1.0V.
1. ICP
o
vs VCP
o
= Charge Pump Output Current magnitude variation vs Voltage =
[
1
⁄
2
*
{|I1| − |I3|}] / [
1
⁄
2
*
{|I1| + |I3|}]
*
100% and [
1
⁄
2
*
{|I4| − |I6|}] / [
1
⁄
2
*
{|I4| + |I6|}]
*
100%
2. ICP
o-sink
vs ICP
o-source
= Charge Pump Output Current Sink vs Source Mismatch =
[|I2| − |I5|] / [
1
⁄
2
*
{|I2| + |I5|}]
*
100%
3. ICP
o
vs T
A
= Charge Pump Output Current magnitude variation vs Temperature =
京公网安备 11010802033920号
EEWORLD
